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$108.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 600 V | 75 A | N/A | N/A | N/A | ≈ 150 g |
| Voltage | 600 V |
| Amp/H | 75 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈ 150 g |
600 V / 75 A dual IGBT power module for UPS inverters, motor drives, and high-power SMPS. Each IGBT includes a
reverse-connected fast/soft recovery diode. The insulated base simplifies heatsinking and grounding.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG75J2YS40 |
| Device Type | Dual IGBT half-bridge with antiparallel fast/soft diodes |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC) | 75 A (DC) |
| Pulse Collector Current (ICM) | 150 A (≈1 ms) |
| Gate-Emitter Voltage (VGES) | ±20 V |
| VCE(sat) (typ./max) | ~2.10 V typ / ≤2.70 V @ IC=75 A, VGE=15 V, 25 °C |
| Gate Threshold (VGE(th)) | ~5.0–8.0 V (typ ~7.0 V) |
| Capacitances (typ.) | Cies ~7.1 nF |
| Switching (typ.) | td(on) 0.08–0.16 µs; tr 0.12–0.24 µs; td(off) 0.20–0.40 µs; tf 0.15–0.30 µs |
| Diode (per leg) | VF ~2.10 V typ / ≤2.80 V max @ 75 A; trr 0.08–0.15 µs |
| Thermal Resistance | RthJC(IGBT) ~0.32 °C/W; RthJC(Diode) ~0.69 °C/W |
| Isolation (terminals→base) | 2.5 kVRMS / 1 min |
| Operating / Storage | Tj ≤150 °C / Tstg −40…+125 °C |
| Collector Power Dissipation | ≈390 W @ TC=25 °C |
| Package / Mass | Isolated-base module; ~200 g |
| Configuration | Dual (2-pack) half-bridge |
| Module | Applications | Notes |
| MG75J2YS40 | UPS; AC drives; DC choppers; welders; SMPS | Confirm pinout, torque, gate-drive limits, and cooling. |
