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MITSUBISHI – CM100TU-12H – IGBT Power Module – 600V 100A Six-Pack 3-Phase Bridge – Reclaimed Part

Manufacturer

OEM Part Number

CM100TU-12H

GPS Part Number

27-MIT-CM100TU-12H

Tags

Price:

$177.00

Specifications
Voltage WPC AH/kVA Length Width Height Weight
600 V N/A 100 A N/A N/A N/A 570 g
Voltage 600 V
WPC N/A
Amp/H 100 A
Length N/A
Width N/A
Height N/A
Weight 570 g
Mitsubishi Electric — CM100TU-12H IGBT Power Module
600 V • 100 A • Six-Pack 3-Phase Bridge • 6 IGBTs + Antiparallel Free-Wheel Diodes • Isolated Baseplate • Reclaimed Part
What it is

The Mitsubishi Electric CM100TU-12H is a high-power 600 V, 100 A six-pack IGBT module containing the six switching devices required to form a complete three-phase inverter bridge. Each IGBT is paired with an antiparallel free-wheel diode, allowing the module to handle the inductive currents encountered in motor drives, UPS inverter stages, servo systems, welding equipment, and industrial power-conversion systems.

Unlike single-switch and dual half-bridge modules that require several separate power blocks to construct a three-phase inverter, the CM100TU-12H integrates all three inverter legs into one isolated-base assembly. This reduces external bus connections, simplifies mechanical installation, and provides a compact replacement solution for equipment originally designed around Mitsubishi’s six-pack power-module architecture.

With a 600 V collector-emitter rating, 100 A continuous collector-current capability, approximately 200 A pulsed capability, and fast switching characteristics, the CM100TU-12H is designed for demanding industrial switching service. Its electrically isolated baseplate allows the module to mount directly to an appropriate heatsink while maintaining electrical isolation between the semiconductor circuit and chassis.

At-a-Glance
  • Manufacturer: Mitsubishi Electric
  • Part Number: CM100TU-12H
  • Voltage / Current: 600 V / 100 A
  • Peak Collector Current: Approximately 200 A pulsed
  • Topology: Six-pack / complete three-phase IGBT bridge
  • Semiconductors: 6 IGBTs with 6 antiparallel free-wheel diodes
  • Gate Rating: ±20 V maximum
  • Isolation: 2.5 kV RMS / 1 minute
  • Mounting: Screw-mount with electrically isolated baseplate
  • Use Cases: UPS inverters; VFDs; AC motor drives; servo drives; welders; industrial power supplies
  • Condition: Reclaimed Part
Features
  • Complete three-phase bridge — Six IGBTs are integrated into one module, providing three high-side and three low-side switching devices.
  • Integrated free-wheel diodes — Each IGBT incorporates an antiparallel diode for inductive-current commutation.
  • Low conduction loss — VCE(sat) approximately 2.4 V typical and 3.0 V maximum at 100 A and 25 °C.
  • Fast switching performance — Nanosecond-range switching characteristics support efficient inverter and motor-control operation.
  • Moderate gate-drive requirement — Typical total gate charge of approximately 200 nC per switching device under specified test conditions.
  • High electrical isolation — 2.5 kV RMS terminal-to-baseplate isolation simplifies heatsink and chassis integration.
  • Integrated inverter architecture — Reduces the number of individual power modules and high-current interconnections required for a three-phase bridge.
  • Industrial service design — Intended for high-power motor control, inverter, UPS, welding, and automation equipment.
Technical Specifications
Parameter Value
Manufacturer Mitsubishi Electric
Part Number CM100TU-12H
Device Type Six-pack IGBT power module with antiparallel diodes
Circuit Configuration Complete three-phase bridge — 6 IGBTs + 6 free-wheel diodes
Collector-Emitter Voltage (VCES) 600 V
Continuous Collector Current (IC) 100 A
Peak Collector Current Approximately 200 A pulsed
Gate-Emitter Voltage (VGES) ±20 V maximum
VCE(sat) 2.4 V typical / 3.0 V maximum @ VGE=15 V, IC=100 A, 25 °C
VCE(sat) at Elevated Temperature Approximately 2.6 V typical @ 125 °C
Gate Threshold Voltage (VGE(th)) 4.5–7.5 V; approximately 6 V typical
Total Gate Charge (QG) Approximately 200 nC under specified switching conditions
Input Capacitance (Cies) Approximately 8.8 nF
Output Capacitance (Coes) Approximately 4.8 nF
Reverse Transfer Capacitance (Cres) Approximately 1.3 nF
Turn-On Delay (td(on)) Approximately 100 ns typical
Rise Time (tr) Approximately 250 ns typical
Turn-Off Delay (td(off)) Approximately 200 ns typical
Fall Time (tf) Approximately 300 ns typical
Diode Reverse-Recovery Charge (Qrr) Approximately 0.24 µC under specified test conditions
IGBT Thermal Resistance RthJC Approximately 0.31 °C/W per transistor
Diode Thermal Resistance RthJC Approximately 0.70 °C/W per diode
Maximum Collector Dissipation Approximately 400 W per specified device conditions
Isolation Test Voltage 2.5 kV RMS / 1 minute, terminals-to-baseplate
Terminal Torque M4: approximately 1.3–1.7 N·m
Mounting Torque M5: approximately 2.5–3.5 N·m
Approximate Mass 570 g
Baseplate Electrically isolated metal baseplate
Configuration Three-phase six-pack bridge
Condition Reclaimed Part
Compatibility / Representative Uses
Module Representative Applications Replacement Notes
CM100TU-12H UPS inverter stages; three-phase AC motor drives; variable-frequency drives; servo drives; welding equipment; laser power supplies; industrial automation and power-conversion equipment Confirm the complete CM100TU-12H part number, six-pack circuit configuration, terminal arrangement, gate connections, mounting footprint, gate-drive requirements and heatsink interface before substitution.
Why Buy from Gruber
  • Power electronics expertise — Experience supporting UPS, inverter, motor-drive and critical-power equipment using high-power semiconductor modules.
  • Reclaimed legacy components — Hard-to-find Mitsubishi power modules for maintaining equipment where original semiconductor assemblies may no longer be readily available.
  • Traceability — Reclaimed modules can be tracked through our service and inventory process.
  • Replacement assistance — We can help compare voltage, current, circuit topology, gate-drive requirements, terminal layout and mechanical fit when replacing a legacy IGBT module.