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Mitsubishi – CM100TU-12H – IGBT Power Transistor – Reclaimed Part

CM100TU-12H_1
EE
CM100TU-12H_1
EE

Manufacturer

OEM Part Number

CM100TU-12H

GPS Part Number

27-MIT-CM100TU-12H

Categories

Tags

Price:

$177.00

Specifications
Voltage WPC AH/kVA Length Width Height Weight
600 V N/A 100 A N/A N/A N/A 570 g
Voltage 600 V
WPC N/A
Amp/H 100 A
Length N/A
Width N/A
Height N/A
Weight 570 g

Mitsubishi — CM100TU-12H IGBT Module
600 V •
100 A •
Six-pack (3-phase bridge: 6 IGBTs + antiparallel diodes) •
Isolated baseplate
What it is

600 V, 100 A six-pack IGBT power module (three-phase bridge) with discrete fast free-wheel diodes and an insulated baseplate.
Common in UPS inverters, motor/servo drives, welders, and high-power supplies; offers low VCE(sat), modest gate charge, and robust isolation for straightforward thermal and EMC design.

At-a-Glance
  • Voltage / Current: 600 V / 100 A (200 A peak, pulsed)
  • Topology: Six-pack (3-phase bridge) with antiparallel diodes
  • Mounting: Screw-mount, isolated baseplate
  • Use Cases: UPS inverter stages; AC motor/servo drives; welding & laser power; industrial supplies
  • Condition Options: New old stock or tested reclaimed pulls
Features
  • Low conduction loss — VCE(sat) typ. ≈ 2.4 V @ 100 A, 25 °C (max 3.0 V).
  • Clean commutation — discrete fast FWDi per transistor; Qrr typ. ≈ 0.24 µC.
  • Modest drive requirements — total gate charge ≈ 200 nC at 300 V/100 A.
  • Robust isolation — 2.5 kVRMS 1 min baseplate test.
Technical Specifications
Parameter Value
Manufacturer Mitsubishi Electric
Part Number CM100TU-12H
Device Type Six-pack IGBT module (3-phase bridge) with antiparallel diodes
Collector-Emitter Voltage (VCES) 600 V
Collector Current (IC) 100 A (per module, Tc=25 °C); 200 A peak (pulse)
Max Collector Dissipation (Pc) 400 W (Tj<150 °C)
VCE(sat) typ. 2.4 V / max 3.0 V @ VGE=15 V, IC=100 A, 25 °C; ≈ 2.6 V @ 125 °C
Gate-Emitter Voltage (max) ±20 V
Gate Threshold VGE(th) 4.5 – 7.5 V (typ. 6 V)
Gate Charge (typ.) QG ≈ 200 nC (VCC=300 V, IC=100 A, 15 V)
Capacitances (typ.) Cies ≈ 8.8 nF; Coes ≈ 4.8 nF; Cres ≈ 1.3 nF
Switching Times (typ.) td(on) 100 ns; tr 250 ns; td(off) 200 ns; tf 300 ns (VCC=300 V, IC=100 A, ±15 V, RG=6.3 Ω)
Diode (typ.) trr —; Qrr ≈ 0.24 µC @ IE=100 A, di/dt=-200 A/µs
Thermal Resistance RthJC(IGBT) ≈ 0.31 °C/W (per transistor, 1/6 module); RthJC(Diode) ≈ 0.70 °C/W
Isolation 2.5 kVRMS (1 min, terminals-to-baseplate)
Torque / Mass M4 terminals 1.3–1.7 N·m; M5 mounting 2.5–3.5 N·m; ≈ 570 g
Package / Footprint Six-pack module; isolated baseplate; per datasheet outline drawing
Configuration Three-phase bridge (six IGBTs + six FWDi)
Compatibility / Representative Uses
Module Applications Notes
CM100TU-12H UPS inverters; AC motor/servo drives; welding & laser power; industrial power supplies Observe torque specs, isolation test levels, and thermal interface guidance per datasheet.
Why buy from Gruber
  • Tested pulls & new stock — Gate/diode checked, continuity verified, baseplate flatness inspected.
  • Traceability — Each module labeled with a work-order ID for service history confidence.
  • UPS expertise — We match the exact module variant and hardware to your frame for a drop-in fix.

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