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TOSHIBA – MG300Q2YS45 – IGBT Power Transistor – Reclaimed Part

Manufacturer

OEM Part Number

MG300Q2YS45

GPS Part Number

27-TOS-MG300Q2YS45

Tags

Price:

$92.00

Specifications
View Spec Sheet
Voltage AH/kVA Length Width Height Weight
1200 V 300 A N/A N/A N/A โ‰ˆ ย 430 โ€“ 465 g
Voltage 1200 V
Amp/H 300 A
Length N/A
Width N/A
Height N/A
Weight โ‰ˆ ย 430 โ€“ 465 g

Toshiba โ€” MG300Q2YS45 IGBT Module

1200ย V โ€ข
300ย A โ€ข
Dual half-bridge (2ย IGBTs + diodes) โ€ข
Isolated baseplate

What it is

1200ย V / 300ย A dual IGBT power module with integrated free-wheel diodes for inverters and motor drives. Insulated base simplifies heatsinking.

At-a-Glance
  • Voltage / Current: 1200ย V / 300ย A
  • Topology: Dual half-bridge with antiparallel diodes
  • Mounting: Screw terminals; isolated baseplate
  • Uses: UPS inverters; AC drives; choppers; welders

Technical Specifications
Parameter Value
Manufacturer Toshiba
Part Number MG300Q2YS45
Device Type Dual IGBT half-bridge + diodes
Collector-Emitter Voltage 1200ย V
Continuous Collector Current 300ย A
Pulse Collector Current 600ย A
Gate-Emitter Voltage ยฑ20ย V
VCE(sat) โ‰ˆย 3.6ย V @ 300ย A
Isolation (terminalsโ†’base) 2.5ย kVย RMS, 1ย min
Operating / Storage Tj 150ย ยฐC max / Tstg โˆ’40โ€ฆ+125ย ยฐC
Package / Mass Isolated-base module; ~430โ€“465ย g
Configuration Dual (2-device) half-bridge

Compatibility / Representative Uses
Module Applications Notes
MG300Q2YS45 UPS; drives; choppers; welders Confirm pinout, torque, cooling.

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