Toshiba โ MG300Q2YS45 IGBT Module
1200ย V โข
300ย A โข
Dual half-bridge (2ย IGBTs + diodes) โข
Isolated baseplate
What it is
1200ย V / 300ย A dual IGBT power module with integrated free-wheel diodes for inverters and motor drives. Insulated base simplifies heatsinking.
At-a-Glance
- Voltage / Current: 1200ย V / 300ย A
 
- Topology: Dual half-bridge with antiparallel diodes
 
- Mounting: Screw terminals; isolated baseplate
 
- Uses: UPS inverters; AC drives; choppers; welders
 
Technical Specifications
| Parameter | 
Value | 
| Manufacturer | 
Toshiba | 
| Part Number | 
MG300Q2YS45 | 
| Device Type | 
Dual IGBT half-bridge + diodes | 
| Collector-Emitter Voltage | 
1200ย V | 
| Continuous Collector Current | 
300ย A | 
| Pulse Collector Current | 
600ย A | 
| Gate-Emitter Voltage | 
ยฑ20ย V | 
| VCE(sat) | 
โย 3.6ย V @ 300ย A | 
| Isolation (terminalsโbase) | 
2.5ย kVย RMS, 1ย min | 
| Operating / Storage | 
Tj 150ย ยฐC max / Tstg โ40โฆ+125ย ยฐC | 
| Package / Mass | 
Isolated-base module; ~430โ465ย g | 
| Configuration | 
Dual (2-device) half-bridge | 
Compatibility / Representative Uses
| Module | 
Applications | 
Notes | 
| MG300Q2YS45 | 
UPS; drives; choppers; welders | 
Confirm pinout, torque, cooling. | 
Why buy from Gruber
- Tested pulls & new stock
 
- Traceability
 
- Drop-in help