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$72.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 1200 V | 100 A | N/A | N/A | N/A | 240 grams |
| Voltage | 1200 V |
| Amp/H | 100 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 240 grams |
1200 V, 100 A dual IGBT “2-in-one” module (N-series) for UPS bridges, motor drives, and industrial inverters.
High-speed switching with integrated fast free-wheel diodes and an insulated baseplate for straightforward thermal/EMC design.
| Parameter | Value |
| Manufacturer | Fuji Electric |
| Part Number | 2MBI100NC-120 |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Collector Current (IC) | 100 A (cont., Tc=25 °C); 200 A (1 ms pulse) |
| Max Power Dissipation (PC) | 780 W @ Tc=25 °C |
| VCE(sat) (max) | ≈ 3.3 V @ VGE=15 V, IC=100 A |
| Gate-Emitter Voltage (max) | ±20 V |
| Gate Threshold VGE(th) | 4.5 – 7.5 V |
| Capacitances (typ.) | Cies ≈ 16 nF; Coes ≈ 5.8 nF; Cres ≈ 5.16 nF |
| Switching Times (typ./max) | ton 0.65/1.2 µs; tr 0.25/0.6 µs; toff 0.85/1.5 µs; tf 0.35/0.5 µs (VCC=600 V, IC=100 A, VGE=±15 V, RG=9.1 Ω) |
| Diode (max) | VF ≈ 3.0 V @ 100 A; trr ≈ 0.35 µs |
| Thermal Resistance | RthJC(IGBT) ≈ 0.16 °C/W; RthJC(Diode) ≈ 0.33 °C/W; RthCF ≈ 0.025 °C/W |
| Isolation | 2.5 kVAC / 1 min (baseplate–terminals) |
| Torque (rec.) | 3.5 N·m (mounting & terminals; M5) |
| Operating / Storage | Tj up to +150 °C; Tstg −40…+125 °C |
| Mass | ≈ 240 g |
| Package / Footprint | Fuji N-series 2-in-one; screw terminals; isolated baseplate |
| Configuration | Dual (2-pack half-bridge) |
| Module | Applications | Notes |
| 2MBI100NC-120 | UPS inverter/rectifier bridges; AC/DC servo drives; industrial motor drives; welding/laser power | Confirm gate/aux pinout and mechanical outline vs. OEM drawings; maintain isolation and heatsink flatness. |
