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$110.00
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 1200 V | N/A | 400 A | N/A | N/A | N/A | 400 grams |
| Voltage | 1200 V |
| WPC | N/A |
| Amp/H | 400 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 400 grams |
1200Â V, 400Â A single IGBT module widely used in UPS bridges, motor drives, and high-power converters.
Low switching/conduction loss, fast free-wheel diode, and an isolated base simplify thermal and EMC design.
| Parameter | Value |
| Manufacturer | Fuji Electric |
| Part Number | 1MBI400S-120 |
| Device Type | Single IGBT module (1-pack) with antiparallel diode |
| Collector-Emitter Voltage (VCES) | 1200Â V |
| Collector Current (IC) | 400Â A (module rating) |
| Power Dissipation (Ptot) | ≈ 3.1 kW |
| VCE(sat) (typ.) | ≈ 2.3 V @ VGE=15 V, IC=400 A (25 °C); ≈ 2.8 V @ 125 °C |
| Gate-Emitter Voltage (max) | ±20 V |
| Capacitances (typ.) | Cies ≈ 48 nF; Coes ≈ 10 nF; Cres ≈ 8.8 nF |
| Switching Times (typ.) | ton ≈ 0.35 µs; toff ≈ 0.45 µs (VCC=600 V, IC=400 A, VGE=±15 V, RG=1.8 Ω) |
| Diode VF / trr (typ.) | VF ≈ 2.3–3.0 V; trr ≈ 0.35 µs (IF=400 A) |
| Thermal Resistance | RthJC(IGBT) ≈ 0.04 °C/W; RthJC(Diode) ≈ 0.12 °C/W |
| Isolation | 2.5Â kVRMS / 1Â min (baseplate-to-terminals) |
| Operating Junction Range | −40 °C to +150 °C (series typical) |
| Package / Footprint | Approx. 108 × 62 × 35 mm, screw terminals |
| Configuration | Single (1-pack) |
| Module | Applications | Notes |
| 1MBI400S-120 | UPS inverter/rectifier bridges; high-power motor drives; energy-storage choppers; welding/laser power | Verify gate/aux pinout and mechanical footprint vs. OEM drawings; maintain isolation and heatsink flatness. |