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$69.00
| Voltage | AH/kVA | Length | Width | Height | Weight | 
|---|---|---|---|---|---|
| 1200 V | 300 A | N/A | N/A | N/A | โ ย 450 โ 470 g | 
| Voltage | 1200 V | 
| Amp/H | 300 A | 
| Length | N/A | 
| Width | N/A | 
| Height | N/A | 
| Weight | โ ย 450 โ 470 g | 
1200ย V / 300ย A single IGBT power module for high-power switching and motor-control inverters.
Integrates a reverse-connected fast/soft diode; terminals are isolated from the baseplate for easier heatsinking.
| Parameter | Value | 
| Manufacturer | Toshiba | 
| Part Number | MG300Q1US11 | 
| Device Type | Single IGBT with antiparallel fast/soft diode | 
| Collector-Emitter Voltage (VCES) | 1200ย V | 
| Gate-Emitter Voltage (VGES) | ยฑ20ย V | 
| Continuous Collector Current (IC) | 300ย A (DC) | 
| Pulse Collector Current (ICP, 1ย ms) | 600ย A | 
| Forward Diode Current (IF / IFM) | 300ย A / 600ย A | 
| VCE(sat) (typ./max) | 2.2 / 2.7ย V @ IC=300ย A, VGE=15ย V | 
| Gate Threshold (VGE(OFF)) | 3.0 โ 6.0ย V @ IC=300ย mA, VCE=5ย V | 
| Input Capacitance (Cies) | โย 42,000ย pF (VCE=10ย V, f=1ย MHz) | 
| Switching (typ./max) | tr 0.3/0.6ย ยตs; ton 0.4/0.8ย ยตs; tf 0.6/1.0ย ยตs; toff 1.2/1.8ย ยตs | 
| Diode (per leg) | VF 2.0ย V typ / 3.0ย V max @ 300ย A; trr 0.25/0.5ย ยตs | 
| Thermal Resistance RthJC | Transistor 0.056ย ยฐC/W; Diode 0.20ย ยฐC/W | 
| Collector Power Dissipation (PC) | 2000ย W @ TC=25ย ยฐC | 
| Isolation (terminalsโbase) | 2.5ย kVRMS / 1ย min | 
| Operating / Storage | Tj โคย 150ย ยฐC / Tstg โ40โฆ+125ย ยฐC | 
| Package / Mass | Toshiba 2-109A4A; โย 465ย g | 
| Screw Torque (Terminal / M4 / M6 / Mount) | 2 / 3 / 3ย Nยทm | 
| Configuration | Single switch (Q1 series) | 
| Module | Applications | Notes | 
| MG300Q1US11 | UPS; AC drives; DC choppers; welders; SMPS | Confirm pinout, torque, gate-drive limits, and cooling; observe isolation rating. |