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$69.00
Voltage | AH/kVA | Length | Width | Height | Weight |
---|---|---|---|---|---|
1200 V | 300 A | N/A | N/A | N/A | โ ย 450 โ 470 g |
Voltage | 1200 V |
Amp/H | 300 A |
Length | N/A |
Width | N/A |
Height | N/A |
Weight | โ ย 450 โ 470 g |
1200ย V / 300ย A single IGBT power module for high-power switching and motor-control inverters.
Integrates a reverse-connected fast/soft diode; terminals are isolated from the baseplate for easier heatsinking.
Parameter | Value |
Manufacturer | Toshiba |
Part Number | MG300Q1US11 |
Device Type | Single IGBT with antiparallel fast/soft diode |
Collector-Emitter Voltage (VCES) | 1200ย V |
Gate-Emitter Voltage (VGES) | ยฑ20ย V |
Continuous Collector Current (IC) | 300ย A (DC) |
Pulse Collector Current (ICP, 1ย ms) | 600ย A |
Forward Diode Current (IF / IFM) | 300ย A / 600ย A |
VCE(sat) (typ./max) | 2.2 / 2.7ย V @ IC=300ย A, VGE=15ย V |
Gate Threshold (VGE(OFF)) | 3.0 โ 6.0ย V @ IC=300ย mA, VCE=5ย V |
Input Capacitance (Cies) | โย 42,000ย pF (VCE=10ย V, f=1ย MHz) |
Switching (typ./max) | tr 0.3/0.6ย ยตs; ton 0.4/0.8ย ยตs; tf 0.6/1.0ย ยตs; toff 1.2/1.8ย ยตs |
Diode (per leg) | VF 2.0ย V typ / 3.0ย V max @ 300ย A; trr 0.25/0.5ย ยตs |
Thermal Resistance RthJC | Transistor 0.056ย ยฐC/W; Diode 0.20ย ยฐC/W |
Collector Power Dissipation (PC) | 2000ย W @ TC=25ย ยฐC |
Isolation (terminalsโbase) | 2.5ย kVRMS / 1ย min |
Operating / Storage | Tj โคย 150ย ยฐC / Tstg โ40โฆ+125ย ยฐC |
Package / Mass | Toshiba 2-109A4A; โย 465ย g |
Screw Torque (Terminal / M4 / M6 / Mount) | 2 / 3 / 3ย Nยทm |
Configuration | Single switch (Q1 series) |
Module | Applications | Notes |
MG300Q1US11 | UPS; AC drives; DC choppers; welders; SMPS | Confirm pinout, torque, gate-drive limits, and cooling; observe isolation rating. |