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$84.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 1200 V | 300 A | N/A | N/A | N/A | 400 grams |
| Voltage | 1200 V |
| Amp/H | 300 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 400 grams |
1200 V, 300 A single IGBT module from Fuji’s N-series, used in UPS bridges, motor drives, and high-power converters.
Known for low saturation voltage and robust SOA, with an integrated fast free-wheel diode and an isolated baseplate for straightforward thermal/EMC design.
| Parameter | Value |
| Manufacturer | Fuji Electric |
| Part Number | 1MBI300N-120 |
| Device Type | Single IGBT module (1-pack) with antiparallel diode |
| Collector-Emitter Voltage (VCES) | 1200Â V |
| Collector Current (IC) | 300Â A (continuous); 600Â A (1Â ms pulse) |
| Power Dissipation (PC) | 2100 W @ TC=25 °C |
| VCE(sat) | ≈ 3.3 V @ VGE=15 V, IC=300 A (25 °C) |
| Gate-Emitter Voltage (max) | ±20 V |
| Gate Threshold VGE(th) | 4.5–7.5 V (typical range) |
| Capacitances (typ.) | Cies ≈ 48,000 pF; Coes ≈ 17,400 pF |
| Thermal Resistance | RthJC(IGBT) ≈ 0.06 °C/W; RthJC(Diode) ≈ 0.17 °C/W; RthCF ≈ 0.0125 °C/W |
| Isolation | 2.5 kVRMS / 1 min (baseplate–terminals) |
| Operating / Storage | Tj up to +150 °C; Tstg −40…+125 °C |
| Package / Footprint | Fuji N-series single-pack module; screw terminals; isolated baseplate |
| Configuration | Single (1-pack) |
| Module | Applications | Notes |
| 1MBI300N-120 | UPS inverter/rectifier bridges; high-power motor drives; energy-storage choppers; welding/laser power | Confirm gate/aux pinout and footprint vs. OEM drawings; maintain isolation and heatsink flatness. |
