Parameter |
Value |
Manufacturer |
Toshiba |
Part Number |
12-713200-00 |
Device Type |
Single IGBT module with antiparallel diode |
Collector-Emitter Voltage (VCES) |
600ย V |
Continuous Collector Current (IC) |
200ย A |
VCE(sat) (typ.) |
~2.0โ2.3ย V @ 200ย A, VGE=15ย V, 25ย ยฐC |
Gate-Emitter Voltage (max) |
ยฑ20ย V |
Free-wheel Diode |
Fast/soft; VF ~2โ3ย V; trr ~0.3โ0.4ย ยตs |
Isolation (terminalsโbase) |
~2.5ย kVRMS / 1ย min |
Thermal Resistance |
RthJC(IGBT) ~0.09โ0.12ย ยฐC/W |
Package / Footprint |
Single-pack; screw terminals; isolated baseplate |
Configuration |
Single (1-pack) IGBT + diode |