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$55.00
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 600 V | N/A | 300 A | N/A | N/A | N/A | 230 grams |
| Voltage | 600 V |
| WPC | N/A |
| Amp/H | 300 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 230 grams |
600 V, 300 A dual IGBT module (U-Series “2-in-one”) used in UPS bridges, motor drives, and high-power inverters.
Integrated fast free-wheel diodes and an isolated baseplate simplify thermal/EMC design and enable clean commutation.
| Parameter | Value |
| Manufacturer | Fuji Electric |
| Part Number | 2MBI300U2B-060 |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 600 V |
| Collector Current (IC) | 300 A (continuous, Tc=25 °C); 600 A (1 ms pulse) |
| Collector Power Dissipation (Pc) | 1000 W @ Tc=25 °C |
| VCE(sat) (25 °C / 125 °C) | typ. ≈ 2.10 V / — ; max ≈ 2.30–2.45 V @ 300 A, 15 V gate |
| Gate-Emitter Voltage (max) | ±20 V |
| Gate Threshold VGE(th) | ≈ 6.7–7.7 V |
| Capacitance (typ.) | Cies ≈ 23 nF @ VCE=10 V, 1 MHz |
| Switching Times (typ.) | ton ≈ 0.40 µs; tr(i) ≈ 0.07 µs; toff ≈ 0.60 µs; tf ≈ 0.16 µs (VCC=300 V, IC=300 A, VGE=±15 V, RG=9.1 Ω) |
| Diode (typ.) | trr ≈ 0.35 µs @ IF=300 A; VF ≈ 1.6–1.95 V |
| Thermal Resistance | RthJC(IGBT) ≈ 0.125 °C/W; RthJC(Diode) ≈ 0.23 °C/W; RthCF (with grease) ≈ 0.025 °C/W |
| Isolation | 2.5 kVRMS / 1 min (baseplate–terminals) |
| Operating Junction Range | −40 °C to +150 °C |
| Package / Footprint | Approx. 92 × 45 × 30 mm; 7-pin, screw terminals (U2B) |
| Configuration | Dual (2-pack half-bridge) |
| Module | Applications | Notes |
| 2MBI300U2B-060 | UPS inverter/rectifier bridges; high-power motor drives; energy-storage choppers; welding/laser power | Confirm gate/aux pinout and mechanical footprint vs. OEM drawings; maintain isolation and heatsink flatness. |
