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$235.00
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 1200 VAC | N/A | 300 A | N/A | N/A | N/A | 1LB – 1.2LB |
| Voltage | 1200 VAC |
| WPC | N/A |
| Amp/H | 300 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 1LB – 1.2LB |
The Mitsubishi Electric / Powerex CM300DY-24NF is a high-power 1200 V, 300 A dual IGBT module configured as a complete half-bridge. Two power IGBTs and their associated antiparallel fast-recovery diodes are integrated into a rugged, electrically isolated module designed for demanding industrial power-conversion equipment.
This module is well suited for UPS inverter and rectifier stages, variable-frequency drives, industrial motor controls, DC-link choppers, welding equipment, laser power supplies, and other high-current switching systems. The half-bridge configuration reduces external interconnections while providing the upper and lower switching devices required by many inverter designs.
The isolated baseplate allows the CM300DY-24NF to be mounted to a properly prepared heatsink while maintaining electrical isolation between the power semiconductor circuit and cooling assembly. Its combination of high blocking voltage, substantial current capability, fast diode recovery, and low conduction loss makes it particularly useful for maintaining legacy critical-power equipment.
For replacement applications, always match the complete CM300DY-24NF part number. Similar Mitsubishi CM300-series modules may share a general package style while differing in voltage rating, semiconductor generation, switching characteristics, terminal arrangement, auxiliary connections, or thermal specifications.
| Parameter | Value |
| Manufacturer | Mitsubishi Electric / Powerex |
| Part Number | CM300DY-24NF |
| Device Type | Dual IGBT half-bridge with antiparallel fast-recovery diodes |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Collector Current (IC) | 300 A class |
| Circuit Configuration | Two IGBTs connected as a half-bridge |
| Free-Wheel Diodes | Integrated antiparallel fast-recovery diode for each IGBT |
| VCE(sat) | Approximately 2.1 V typical at rated-current test conditions |
| Gate-Emitter Voltage | High-power IGBT gate-drive interface; verify allowable drive limits before installation |
| Operating Junction Temperature | Up to approximately +150 °C |
| Mounting / Baseplate | Screw/chassis mount with electrically isolated baseplate |
| Package Class | Large-format Mitsubishi dual IGBT power module |
| Configuration | Dual / half-bridge |
| Condition | Reclaimed Part |
| Module | Applications | Replacement Notes |
| CM300DY-24NF | UPS inverter/rectifier bridges; high-power motor drives; DC-link choppers; industrial inverters; welding and laser power supplies | Verify the complete part number, gate and auxiliary connections, terminal arrangement, mounting footprint, electrical ratings, and thermal requirements against the original equipment before substitution. |



