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PRX – MG200Q2YS65H – IGBT Power Transistor – Reclaimed Part

MG200Q2YS65H_1
EE
MG200Q2YS65H_1
EE

Manufacturer

OEM Part Number

MG200Q2YS65H

GPS Part Number

27-PRX-MG200Q2YS65H

Categories

Tags

Price:

$80.00

Specifications
View Spec Sheet
Voltage AH/kVA Length Width Height Weight
1200 V 200 A N/A N/A N/A 430 g
Voltage 1200 V
Amp/H 200 A
Length N/A
Width N/A
Height N/A
Weight 430 g

Powerex / Toshiba โ€” MG200Q2YS65H IGBT Module
1200ย V โ€ข
200ย A โ€ข
Dual half-bridge (2ย IGBTs + antiparallel fast diodes) โ€ข
Isolated baseplate
What it is

1200ย V, 200ย A dual IGBT power module for high-power inverters, UPS bridges, and motor drives.
Integrated fast free-wheel diodes and a 2.5ย kVRMS insulated baseplate simplify thermal and EMC design.

At-a-Glance
  • Voltage / Current: 1200ย V / 200ย A (400ย A, 1ย ms pulse)
  • Topology: Dual IGBT half-bridge with antiparallel diodes
  • Mounting: Screw-mount, isolated baseplate (3ย Nยทm terminal & mount torque)
  • Use Cases: UPS inverter/rectifier stages; industrial motor drives; general-purpose inverters
  • Condition Options: New old stock or tested reclaimed pulls
Features
  • Low conduction loss โ€” VCE(sat) typ. 3.0ย V @ 200ย A, 25ย ยฐC (โ‰ˆย 3.6ย V @ 125ย ยฐC; max 4.0ย V).
  • Clean commutation โ€” diode VF typ. 2.4ย V (max 3.5ย V); trr typ. 0.1ย ยตs.
  • Isolated baseplate โ€” 2.5ย kVRMS/1ย min base-to-terminals.
  • Service-friendly โ€” ~430ย g module with standard dual-pack footprint.
Technical Specifications
Parameter Value
Manufacturer Powerex / Toshiba
Part Number MG200Q2YS65H
Device Type Dual IGBT half-bridge with antiparallel fast diodes
Collector-Emitter Voltage (VCES) 1200ย V
Collector Current (IC) 200ย A (DC, Tc=25ย ยฐC); 400ย A (1ย ms pulse)
Forward Current (diode) 200ย A DC; 400ย A (1ย ms pulse)
Collector Power Dissipation (PC) 1310ย W @ Tc=25ย ยฐC
VCE(sat) (typ./max) 3.0ย V typ @ 200ย A, 25ย ยฐC; 3.6ย V typ @ 200ย A, 125ย ยฐC; 4.0ย V max
Gate-Emitter Voltage (max) ยฑ20ย V
Gate Threshold / Leakage VGE(off) 4.0โ€“7.0ย V; IGES โ‰ค ยฑ500ย nA
Capacitance (typ.) Cies โ‰ˆ 17ย nF (VCE=10ย V, 1ย MHz)
Switching (typ.) td(on) 0.05ย ยตs; tr 0.05ย ยตs; td(off) 0.55ย ยตs; tf 0.05โ€“0.15ย ยตs
Switching Energy (typ.) Eon 20ย mJ; Eoff 17ย mJ @ VCC=600ย V, IC=200ย A, VGE=ยฑ15ย V, RG=4.7ย ฮฉ, Tc=125ย ยฐC
Diode (typ./max) VF 2.4/3.5ย V @ 200ย A; trr 0.1ย ยตs (IF=200ย A)
Thermal Resistance Rth(j-c)(IGBT) 0.095ย ยฐC/W; Rth(j-c)(Diode) 0.21ย ยฐC/W
Isolation / Torque / Mass 2.5ย kVRMS/1ย min; terminals & mounts 3ย Nยทm; โ‰ˆย 430ย g
Operating / Storage Tj โˆ’40โ€ฆ+150ย ยฐC; Tstg โˆ’40โ€ฆ+125ย ยฐC
Package / Footprint Dual 2-in-one module; standard screw terminals; isolated copper baseplate
Configuration Dual (2-pack half-bridge)
Compatibility / Representative Uses
Module Applications Notes
MG200Q2YS65H UPS inverter/rectifier bridges; high-power motor drives; industrial inverters Observe 3ย Nยทm torque, 2.5ย kV isolation, and specified switching/thermal limits.
Why buy from Gruber
  • Tested pulls & new stock โ€” Gate/diode behavior verified, continuity checked, baseplate flatness inspected.
  • Traceability โ€” Each module labeled with a work-order ID for service history confidence.
  • UPS expertise โ€” We match the exact module variant and hardware to your frame for a drop-in fix.

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