Mitsubishi – PM600DSA060 – IGBT Power Transistor – Reclaimed Part

Mitsubishi — PM600DSA060 Intelligent Power Module

What it is

High-current 600 V / 600 A Mitsubishi Intelligent Power Module (IPM) that combines a dual IGBT power stage,
fast free-wheel diodes, opti­mized gate drive, and on-board protections (SC/OC/OT/UV) in a flat-base insulated package.
Designed for inverters, UPS, motion control, and high-power supplies up to ~20 kHz PWM.

At-a-Glance

• Voltage / Current: 600 V / 600 A (IGBT sector ratings; 1200 A peak)
• Topology: Single-phase inverter (dual IGBTs) with antiparallel diodes
• Drive & Protection: Integrated gate drive; short-circuit, over-current, over-temperature, under-voltage
• PWM Range: Recommended ~5–20 kHz (min dead-time ≥ 3.5 µs)
• Mounting: Screw-mount, isolated base; 2.5 kV_RMS isolation

Features

• Low conduction loss — V_CE(sat) typ. ≈ 1.8–1.9 V @ 600 A (≈ 2.7 V max).
• Fast commutation — t_rr typ. ≈ 0.15 – 0.30 µs; switching times tailored for hard-switched bridges.
• Thermally efficient — R_thJC (IGBT) ≈ 0.07 °C/W, (diode) ≈ 0.13 °C/W; R_thCF ≈ 0.030 °C/W (with grease).
• Rugged mechanics — M8 main terminals, M6 mounts; typical module mass ≈ 910 g.

Technical Specifications

Compatibility / Representative Uses