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$64.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 1200 V | 75 A | N/A | N/A | N/A | 200 grams |
| Voltage | 1200 V |
| Amp/H | 75 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 200 grams |
1200 V, 75 A dual IGBT module used in UPS bridges, motor drives, and high-power inverters.
L-series design with low VCE(sat), robust RBSOA, fast free-wheel diodes, and an isolated baseplate for simple thermal/EMC integration.
| Parameter | Value |
| Manufacturer | Fuji Electric |
| Part Number | 2MBI75N-120 |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Collector Current (IC) | 75 A (continuous, @25 °C) |
| Power Dissipation (Ptot) | ≈ 600 W @ TC=25 °C |
| VCE(sat) (typ.) | ≈ 3.3 V @ VGE=15 V, IC=75 A |
| Gate-Emitter Voltage (max) | ±20 V |
| Isolation | 2.5 kVRMS / 1 min (baseplate–terminals) [series typical] |
| Operating Junction Range | −40 °C to +150 °C |
| Package / Footprint | ≈ 94 × 34 × 30 mm body; mass ≈ 180 g |
| Configuration | Dual (2-pack half-bridge) |
| Module | Applications | Notes |
| 2MBI75N-120 | UPS inverter/rectifier bridges; industrial motor drives; energy-storage choppers; welding/laser power | Verify gate/aux pinout and mechanical footprint vs. OEM drawings; maintain isolation and heatsink flatness. |
