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EUPEC – BSM150GB60DLC – 05040 – IGBT Power Transistor – Reclaimed Part

Manufacturer

OEM Part Number

BSM150GB60DLC-05040

GPS Part Number

27-epu-BSM150GB60DLC-05040

Tags

Price:

$69.54

Specifications
Voltage WPC AH/kVA Length Width Height Weight
600 V N/A 150 A N/A N/A N/A 180 grams
Voltage 600 V
WPC N/A
Amp/H 150 A
Length N/A
Width N/A
Height N/A
Weight 180 grams
eupec / Infineon BSM150GB60DLC IGBT Power Module — 600 V • 150 A • Dual Half-Bridge • Integrated Freewheel Diodes • Isolated Baseplate
High-Power Switching • UPS Inverters • Motor Drives • Industrial Power Conversion

The eupec / Infineon BSM150GB60DLC is a rugged 600 V, 150 A dual IGBT half-bridge power module designed for high-current switching applications including UPS inverter and rectifier stages, industrial motor drives, DC-link converters, welding equipment, and other high-power electronic systems.

The module integrates two IGBTs with antiparallel freewheel diodes in an electrically isolated, screw-mounted package. Its low conduction loss, fast switching characteristics, and isolated baseplate simplify heatsink integration while providing dependable operation in demanding bridge and inverter circuits.

Originally manufactured under the eupec brand and associated with Infineon Technologies, the BSM150GB60DLC remains commonly encountered in legacy industrial and critical-power equipment where maintaining the original electrical and mechanical configuration is important during repair.

At a Glance
  • Collector-Emitter Voltage: 600 V
  • Nominal Collector Current: 150 A at TC = 60°C
  • Repetitive Peak Current: 300 A for 1 ms
  • Topology: Dual IGBT half-bridge with antiparallel freewheel diodes
  • Typical VCE(sat): 1.95 V at 150 A, VGE = 15 V, 25°C
  • Electrical Isolation: Internally isolated baseplate for heatsink mounting
  • Typical Applications: UPS systems, motor drives, industrial inverters, converters, welding and laser power supplies
Key Features
  • High-current switching capability — 150 A nominal collector-current rating with 300 A repetitive peak capability.
  • Low conduction loss — approximately 1.95 V typical collector-emitter saturation voltage at 150 A and 25°C.
  • Fast integrated freewheel diodes — support efficient commutation in inductive bridge and motor-drive applications.
  • Isolated baseplate — simplifies heatsink mounting while maintaining electrical isolation from the cooling surface.
  • High isolation capability — specified at 2.5 kV RMS for one minute.
  • Wide operating range — rated for operation from −40°C to +125°C, with maximum junction temperature of 150°C.
  • Legacy equipment support — useful for maintaining UPS systems, drives, and industrial power electronics originally designed around this module footprint.
Technical Specifications
Parameter Value
Manufacturer eupec / Infineon Technologies
Part Number BSM150GB60DLC
Device Type Dual IGBT half-bridge power module with antiparallel diodes
Collector-Emitter Voltage (VCES) 600 V
Nominal Collector Current (IC,nom) 150 A at TC = 60°C
Collector Current @ 25°C 180 A
Repetitive Peak Collector Current 300 A, 1 ms pulse
Total Power Dissipation 595 W per transistor at T<