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$213.00
Voltage | AH/kVA | Length | Width | Height | Weight |
---|---|---|---|---|---|
1400 V | 200 A | N/A | N/A | N/A | 909 grams |
Voltage | 1400 V |
Amp/H | 200 A |
Length | N/A |
Width | N/A |
Height | N/A |
Weight | 909 grams |
1400ย V, 200ย A dual IGBT โ2-in-oneโ module from Fujiโs P-Series. Suited for UPS bridges, motor drives, and general-purpose inverters, with wide RBSOA, strong short-circuit withstand, and fast free-wheel diodes in a screw-mount, isolated-base module.
Parameter | Value |
Manufacturer | Fuji Electric |
Part Number | 2MBI200PB-140 |
Device Type | Dual IGBT half-bridge with antiparallel diodes |
Collector-Emitter Voltage (VCES) | 1400ย V |
Collector Current (IC) | 200ย A (cont., Tc=80ย ยฐC); 300ย A (cont., 25ย ยฐC); 400โ600ย A (1ย ms pulse, per datasheet) |
Collector Power Dissipation (PC) | 1500ย W @ Tc=25ย ยฐC |
VCE(sat) | 2.7ย V typ. / 3.0ย V max @ VGE=15ย V, IC=200ย A, 25ย ยฐC; โย 3.3ย V @ 125ย ยฐC |
Gate-Emitter Voltage (max) | ยฑ20ย V |
Gate Threshold VGE(th) | 6.0โ9.0ย V (typ. 8.0ย V) |
Capacitances (typ.) | Cies โย 20ย nF; Coes โย 3.0ย nF; Cres โย 1.3ย nF (VCE=10ย V, 1ย MHz) |
Switching (typ.) | ton 1.20ย ยตs; tr 0.60ย ยตs; toff 1.00ย ยตs; tf 0.30ย ยตs (VCC=600ย V, IC=200ย A, VGE=ยฑ15ย V, RG=4.7ย ฮฉ) |
Diode | VF 2.4โ3.3ย V @ IF=200ย A; trr โย 0.35ย ยตs |
Thermal Resistance | RthJC(IGBT) โย 0.085ย ยฐC/W; RthJC(Diode) โย 0.180ย ยฐC/W; RthCF โย 0.025ย ยฐC/W (with grease) |
Isolation | 2.5ย kVAC / 1ย min (terminalsโbaseplate) |
Operating / Storage | Tj โ- to +150ย ยฐC (max); Tstg โ40โฆ+125ย ยฐC |
Torque (recommended) | Mounting 2.5โ3.5ย Nยทm (M5); Terminals 3.5โ4.5ย Nยทm (M6) |
Package / Footprint | M235 2-pack module; screw terminals; isolated base |
Configuration | Dual (2-pack half-bridge) |
Module | Applications | Notes |
2MBI200PB-140 | UPS inverter/rectifier bridges; AC/DC servo drives; industrial motor drives; general-purpose inverters | Confirm gate/aux pinout and mechanical outline vs. OEM drawings; maintain isolation and heatsink flatness. |