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$50.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 1200 V | 400 A | N/A | N/A | N/A | ≈ 430 – 465 g |
| Voltage | 1200 V |
| Amp/H | 400 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈ 430 – 465 g |
1200 V / 400 A dual IGBT power module that integrates a full half-bridge with fast free-wheel diodes. Suited for high-power
inverters, motor drives, welders, and UPS systems. Terminals are isolated from the case to simplify heatsinking and grounding.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG400J1US11 |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC) | 400 A (DC) |
| Pulse Collector Current (ICP) | 800 A (≈ 1 ms) |
| Gate-Emitter Voltage (VGES) | ±20 V |
| VCE(sat) (typ./max) | 2.8 / 3.6 V @ IC=400 A, VGE=15 V, 25 °C |
| Gate Threshold (VGE(off)) | ≈ 3.0–6.0 V @ IC=300 mA |
| Input Capacitance (Cies) | ~40 nF (VCE=10 V, f=1 MHz) |
| Switching (typ.) | td(on) ~0.05 µs; tr ~0.05 µs; td(off) ~0.5 µs; tf ~0.1–0.3 µs |
| Diode (per leg) | VF ~2.4 V typ / ≤ 3.5 V max @ 400 A; trr ~0.2–0.3 µs |
| Thermal Resistance RthJC | Transistor ~0.06–0.08 °C/W; Diode ~0.18–0.22 °C/W |
| Collector Power Dissipation | ≈ 2000 W @ TC=25 °C |
| Isolation (terminals→base) | 2.5 kVRMS / 1 min |
| Operating / Storage | Tj ≤ 150 °C / Tstg −40…+125 °C |
| Package / Mass | Toshiba 2-109C-series isolated-base; ≈ 450–470 g |
| Configuration | Dual (2-device) half-bridge |
| Module | Applications | Notes |
| MG400J1US11 | UPS; AC motor drives; DC choppers; welders; SMPS | Confirm pinout, torque, and cooling; observe isolation rating. |
