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SEMIKRON – SKM-75GAR-123D-02060 – IGBT Power Transistor – Reclaimed Part

Manufacturer

OEM Part Number

SKM-75GAR-123D-02060

GPS Part Number

27-SEM-SKM-75GAR-123D-02060

Tags

Price:

$50.00

Specifications
View Spec Sheet
Voltage AH/kVA Length Width Height Weight
1200 V 75 A N/A N/A N/A โ‰ˆ 750 g
Voltage 1200 V
Amp/H 75 A
Length N/A
Width N/A
Height N/A
Weight โ‰ˆ 750 g

Semikron โ€” SKM75GAR123D IGBT Module
1200ย V โ€ข
75ย A โ€ข
Single IGBT (chopper) with antiparallel CAL free-wheel diode โ€ข
Isolated baseplate (SEMITRANSย 2)
What it is

1200ย V / 75ย A single IGBT module from the SEMITRANSย 2 family (customer option code โ€œ-02060โ€).
Used as a chopper/booster switch in UPS, motor drives, and industrial inverters. CAL (soft-recovery) diode is
integrated; isolated metal baseplate simplifies heatsinking and grounding.

At-a-Glance
  • Voltage / Current: 1200ย V / 75ย A (DC at TC=25ย ยฐC; ~50ย A at 125ย ยฐC)
  • Topology: Single IGBT (GAR) with antiparallel CAL diode
  • Mounting: Screw-terminal module; isolated baseplate
  • Package: SEMITRANSย 2; ~94ย ร—ย 34ย ร—ย 30ย mm
  • Applications: Chopper/booster stage, UPS/DC link switching, industrial drives
Features
  • Soft-recovery CAL diode โ€” reduced reverse-recovery losses and EMI.
  • Isolated baseplate โ€” 2.5ย kVRMS isolation test (typical SEMITRANSย 2).
  • Rugged SOA โ€” short-circuit rated (tSC โ‰ˆ 10ย ยตs, per family datasheet).
  • SEMITRANS form factor โ€” drop-in with GB/GAL/GAR variants.
Technical Specifications
Parameter Value
Manufacturer Semikron Danfoss
Part Number SKM75GAR123D (cust. option: SKM-75GAR-123D-02060)
Device Type Single IGBT (chopper) + antiparallel CAL diode
Collector-Emitter Voltage (VCES) 1200ย V
Continuous Collector Current (IC) 75ย A @ TC=25ย ยฐC (โ‰ˆย 50ย A @ 125ย ยฐC)
Gate-Emitter Voltage (VGES) ยฑ20ย V (ยฑ25ย V abs. max family)
VCE(sat) (typ.) โ‰ˆย 2.1ย V @ IC=75ย A, VGE=15ย V, 25ย ยฐC
Free-wheel Diode VF (typ.) โ‰ˆย 2.0ย V @ IF=75ย A, 25ย ยฐC (CAL)
Isolation 2.5ย kVRMS / 1ย min (terminalsโ†”baseplate)
Thermal Resistance RthJC(IGBT) โ‰ˆย 0.35ย K/W; RthJC(Diode) โ‰ˆย 0.55ย K/W
Package / Dimensions SEMITRANSย 2; ~94ย ร—ย 34ย ร—ย 30ย mm
Configuration Single IGBT + antiparallel diode (GAR)
Why buy from Gruber
  • Tested pulls & new stock โ€” Gate/diode behavior verified, continuity checked, baseplate flatness inspected.
  • Traceability โ€” Each module labeled with a work-order ID for service history confidence.
  • Drop-in help โ€” We match GAR vs. GB/GAL variants and fit them correctly in your frame.
Gruber Power Services