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$175.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 1200 V | 400 A | N/A | N/A | N/A | ≈ 750 g |
| Voltage | 1200 V |
| Amp/H | 400 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈ 750 g |
1200 V / 400 A dual half-bridge IGBT module in the low-inductance SEMITRANS 3 package. Features soft-recovery
CAL free-wheel diodes and an insulated DCB baseplate for straightforward heatsinking in UPS, drives, and high-power SMPS.
| Parameter | Value |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC) | 400 A @ TC=25 °C; ~280 A @ 80 °C |
| Gate-Emitter Voltage (VGES) | ±20 V |
| Module IRMS | ≈ 650 A |
| Junction / Storage Temp. | −40…+150 °C / −40…+125 °C |
| Isolation Voltage | 4000 VAC, 1 min |
| Diode Continuous Current (IF) | 400 A @ 25 °C; ~280 A @ 80 °C |
| Diode Surge Current (IFSM) | ~3000 A, 10 ms, Tj=150 °C |
| VCE(sat) @ IC=300 A, VGE=15 V | typ. 3.0 V, max ~3.6 V |
| Diode Forward Voltage (VF) | ~2.3–2.7 V @ 300–400 A |
| Total Gate Charge (Qg) | ~3.0–3.5 µC (per IGBT) |
| Capacitances (typ.) | Cies ~35–45 nF; Coes ~3–4 nF; Cres ~1.5–2.0 nF |
| Rth(j-c) (per IGBT / per Diode) | ≈ 0.050 K/W / ≈ 0.085 K/W |
| Package / Dimensions | SEMITRANS 3 — ~106 × 62 × 31 mm |
| Configuration | Dual IGBT half-bridge with antiparallel CAL diodes |
| Module | Applications | Notes |
| SKM400GB123D (-98181) | UPS; motor drives; welders; high-power SMPS | Observe isolation & thermal limits; follow SEMITRANS 3 torque and gate-drive guidelines. |
