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$127.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 600 V | 150 A | N/A | N/A | N/A | 310 g |
| Voltage | 600 V |
| Amp/H | 150 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 310 g |
600ย V, 150ย A dual IGBT power module (half-bridge) with reverse-connected super-fast free-wheel diodes.
Low VCE(sat), manageable gate charge, and a 2.5ย kVRMS insulated baseplate make it a solid fit for UPS,
motor drives, and general-purpose inverters.
| Parameter | Value |
| Manufacturer | Powerex (Mitsubishi build) |
| Part Number | CM150DU-12F |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 600ย V |
| Collector Current (IC) | 150ย A (Tc=25ย ยฐC); 300ย A (pulse) |
| Maximum Collector Dissipation (Pc) | 520ย W @ Tc=25ย ยฐC |
| VCE(sat) | typ. 1.6ย V / max 2.2ย V @ VGE=15ย V, IC=150ย A (Tj=25ย ยฐC); typ. 1.6ย V @ 125ย ยฐC |
| Gate-Emitter Voltage (max) | ยฑ20ย V |
| Gate Threshold VGE(th) | 5โ7ย V (typ. 6ย V) |
| Capacitances (typ.) | Cies 41ย nF; Coes 2.7ย nF; Cres 1.5ย nF |
| Total Gate Charge | QG typ. 930ย nC @ 300ย V, 150ย A, 15ย V |
| Switching Times (typ.) | td(on) 120ย ns; tr 100ย ns; td(off) 350ย ns; tf 250ย ns (VCC=300ย V, IC=150ย A, ยฑ15ย V, RG=4.2ย ฮฉ) |
| Diode (FWDi) | VEC max 2.6ย V @ 150ย A; trr 150ย ns; Qrr 2.8ย ยตC |
| Thermal Resistance | RthJC(IGBT, 1/2) 0.24ย ยฐC/W; RthJC(Diode, 1/2) 0.47ย ยฐC/W; RthCF (module, greased) 0.07ย ยฐC/W; RthJC* (chip-ref.) 0.19ย ยฐC/W |
| Isolation | 2.5ย kVRMS / 1ย min (terminalsโbaseplate) |
| Operating / Storage | Tj โ40โฆ+150ย ยฐC; Tstg โ40โฆ+125ย ยฐC |
| Torque / Weight | M5 terminals 2.5โ3.5ย Nยทm; M6 mounts 3.5โ4.5ย Nยทm; ~310ย g |
| Package / Footprint | Approx. 94ย รย 48ย รย 30ย mm; 80ย mm hole spacing |
| Configuration | Dual (2-pack half-bridge) |
| Module | Applications | Notes |
| CM150DU-12F | UPS inverter/rectifier bridges; AC motor drives; industrial power | Observe isolation and torque specs; use recommended thermal interface per outline. |
