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$180.00
Voltage | AH/kVA | Length | Width | Height | Weight |
---|---|---|---|---|---|
600 V | 300 A | N/A | N/A | N/A | 500 – 600 g |
Voltage | 600 V |
Amp/H | 300 A |
Length | N/A |
Width | N/A |
Height | N/A |
Weight | 500 – 600 g |
600ย V, 300ย A dual IGBT power module (two-transistor half-bridge) with reverse-connected fast free-wheel diodes
and an insulated baseplate. A proven workhorse for UPS bridges, industrial motor drives, welders, and general-purpose inverters thanks
to low VCE(sat), wide SOA, and straightforward thermal integration.
Parameter | Value |
Manufacturer | Mitsubishi Electric / Powerex |
Part Number | CM300DU-12H |
Device Type | Dual IGBT half-bridge with antiparallel diodes |
Collector-Emitter Voltage (VCES) | 600ย V |
Collector Current (IC) | 300ย A (Tc=25ย ยฐC); 600ย A peak (pulse) |
Max Collector Dissipation (Pc) | โย 1.2ย kW @ Tc=25ย ยฐC |
VCE(sat) | typ. โย 1.8โ2.1ย V / max โย 2.5ย V @ VGE=15ย V, IC=300ย A, 25ย ยฐC |
Gate-Emitter Voltage (max) | ยฑ20ย V |
Gate Threshold VGE(th) | โย 5โ7ย V (typ. 6ย V) |
Capacitances / Gate Charge | See datasheet (module-level values depend on conditions) |
Diode (FWDi) | VF โย 2.2โ2.8ย V @ 300ย A; short trr for hard-switched bridges |
Thermal Resistance | RthJC(IGBT, 1/2) โย 0.08โ0.10ย ยฐC/W; RthJC(Diode, 1/2) โย 0.12โ0.15ย ยฐC/W |
Isolation | 2.5ย kVRMS / 1ย min (terminalsโbaseplate) |
Operating / Storage | Tj โ40โฆ+150ย ยฐC; Tstg โ40โฆ+125ย ยฐC |
Dimensions / Weight | ~108ย รย 62ย รย 30ย mm; โย 500โ600ย g |
Torque (typ.) | M6 terminals & mounting โย 4.5ย Nยทm (โย 40ย in-lb) |
Configuration | Dual (2-pack half-bridge) |
Module | Applications | Notes |
CM300DU-12H | UPS inverter/rectifier bridges; industrial motor drives; welding/laser power | Confirm gate/aux pinout and mechanical outline vs. OEM drawings; maintain isolation and heatsink flatness. |