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Mitsubishi – CM200DY-24H – IGBT Power Transistor – Reclaimed Part

Manufacturer

OEM Part Number

CM200DY-24H

GPS Part Number

27-MIT-CM200DY-24H

Tags

Price:

$116.00

Specifications
View Spec Sheet
Voltage AH/kVA Length Width Height Weight
1200 V 200 A N/A N/A N/A 400 g
Voltage 1200 V
Amp/H 200 A
Length N/A
Width N/A
Height N/A
Weight 400 g

Mitsubishi โ€” CM200DY-24H IGBT Module
1200ย V โ€ข
200ย A โ€ข
Dual half-bridge (2ย IGBTs + antiparallel diodes) โ€ข
Isolated baseplate
What it is

1200ย V, 200ย A dual IGBT power module (two-transistor half-bridge) with reverse-connected fast free-wheel diodes
and an insulated baseplate. A proven choice for UPS bridges, industrial motor drives, and general-purpose inverters where
low VCE(sat), strong SOA, and straightforward thermal integration are required.

At-a-Glance
  • Voltage / Current: 1200ย V / 200ย A (400ย A peak, pulse)
  • Topology: Dual IGBT half-bridge with antiparallel diodes
  • Mounting: Screw-mount, isolated baseplate
  • Use Cases: UPS inverter/rectifier stages; industrial motor drives; welding/laser power
  • Condition Options: New old stock or tested reclaimed pulls
Features
  • Low conduction loss โ€” VCE(sat) typ. โ‰ˆย 2.1ย V (max โ‰ˆย 2.7ย V) @ 200ย A, 25ย ยฐC.
  • Fast commutation โ€” super-fast FWDi; short trr for clean bridge operation.
  • Rugged gate rating โ€” ยฑ20ย V VGE max with wide RBSOA.
  • Isolated baseplate โ€” simplifies heatsink and grounding strategy.
Technical Specifications
Parameter Value
Manufacturer Mitsubishi Electric / Powerex
Part Number CM200DY-24H
Device Type Dual IGBT half-bridge with antiparallel diodes
Collector-Emitter Voltage (VCES) 1200ย V
Collector Current (IC) 200ย A (Tc=25ย ยฐC); 400ย A peak (pulse)
Max Collector Dissipation (Pc) โ‰ˆย 850โ€“900ย W @ Tc=25ย ยฐC (series typical)
VCE(sat) typ. โ‰ˆย 2.1ย V / max โ‰ˆย 2.7ย V @ VGE=15ย V, IC=200ย A, 25ย ยฐC
Gate-Emitter Voltage (max) ยฑ20ย V
Gate Threshold VGE(th) โ‰ˆย 5โ€“7ย V (typ. 6ย V)
Capacitances (typ.) Cies โ‰ˆย 35โ€“45ย nF; Coes โ‰ˆย 2.5โ€“3.5ย nF; Cres โ‰ˆย 1.5โ€“2.0ย nF
Total Gate Charge QG โ‰ˆย 1200โ€“1800ย nC (application-dependent)
Diode (FWDi) VF โ‰ˆย 2.2โ€“2.8ย V @ 200ย A; trr โ‰ˆย 0.25โ€“0.35ย ยตs
Thermal Resistance RthJC(IGBT, 1/2) โ‰ˆย 0.12โ€“0.15ย ยฐC/W; RthJC(Diode, 1/2) โ‰ˆย 0.18โ€“0.20ย ยฐC/W
Isolation 2.5ย kVRMS / 1ย min (terminalsโ€“baseplate)
Operating / Storage Tj โˆ’40โ€ฆ+150ย ยฐC; Tstg โˆ’40โ€ฆ+125ย ยฐC
Dimensions / Weight ~108ย ร—ย 62ย ร—ย 30ย mm; โ‰ˆย 400ย g
Torque (typ.) M6 terminals & mounting โ‰ˆย 4.5ย Nยทm (โ‰ˆย 40ย in-lb)
Configuration Dual (2-pack half-bridge)
Compatibility / Representative Uses
Module Applications Notes
CM200DY-24H UPS inverter/rectifier bridges; industrial motor drives; welding/laser power Confirm gate/aux pinout and mechanical outline vs. OEM drawings; maintain isolation and heatsink flatness.
Why buy from Gruber
  • Tested pulls & new stock โ€” Gate/diode checked, continuity verified, baseplate flatness inspected.
  • Traceability โ€” Each module labeled with a work-order ID for service history confidence.
  • UPS expertise โ€” We match the exact module variant and hardware to your frame for a drop-in fix.
Gruber Power Services