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$116.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 1200 V | 200 A | N/A | N/A | N/A | 400 g |
| Voltage | 1200 V |
| Amp/H | 200 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 400 g |
1200ย V, 200ย A dual IGBT power module (two-transistor half-bridge) with reverse-connected fast free-wheel diodes
and an insulated baseplate. A proven choice for UPS bridges, industrial motor drives, and general-purpose inverters where
low VCE(sat), strong SOA, and straightforward thermal integration are required.
| Parameter | Value |
| Manufacturer | Mitsubishi Electric / Powerex |
| Part Number | CM200DY-24H |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 1200ย V |
| Collector Current (IC) | 200ย A (Tc=25ย ยฐC); 400ย A peak (pulse) |
| Max Collector Dissipation (Pc) | โย 850โ900ย W @ Tc=25ย ยฐC (series typical) |
| VCE(sat) | typ. โย 2.1ย V / max โย 2.7ย V @ VGE=15ย V, IC=200ย A, 25ย ยฐC |
| Gate-Emitter Voltage (max) | ยฑ20ย V |
| Gate Threshold VGE(th) | โย 5โ7ย V (typ. 6ย V) |
| Capacitances (typ.) | Cies โย 35โ45ย nF; Coes โย 2.5โ3.5ย nF; Cres โย 1.5โ2.0ย nF |
| Total Gate Charge | QG โย 1200โ1800ย nC (application-dependent) |
| Diode (FWDi) | VF โย 2.2โ2.8ย V @ 200ย A; trr โย 0.25โ0.35ย ยตs |
| Thermal Resistance | RthJC(IGBT, 1/2) โย 0.12โ0.15ย ยฐC/W; RthJC(Diode, 1/2) โย 0.18โ0.20ย ยฐC/W |
| Isolation | 2.5ย kVRMS / 1ย min (terminalsโbaseplate) |
| Operating / Storage | Tj โ40โฆ+150ย ยฐC; Tstg โ40โฆ+125ย ยฐC |
| Dimensions / Weight | ~108ย รย 62ย รย 30ย mm; โย 400ย g |
| Torque (typ.) | M6 terminals & mounting โย 4.5ย Nยทm (โย 40ย in-lb) |
| Configuration | Dual (2-pack half-bridge) |
| Module | Applications | Notes |
| CM200DY-24H | UPS inverter/rectifier bridges; industrial motor drives; welding/laser power | Confirm gate/aux pinout and mechanical outline vs. OEM drawings; maintain isolation and heatsink flatness. |