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$114.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 600 V | 200 A | N/A | N/A | N/A | 380 – 420 g |
| Voltage | 600 V |
| Amp/H | 200 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 380 – 420 g |
600ย V, 200ย A dual IGBT power module in a screw-mount, insulated package. Each transistor includes a reverse-connected
fast free-wheel diode. A workhorse for UPS bridges, motor drives, and general-purpose inverters thanks to low VCE(sat), robust isolation,
and straightforward thermal design.
| Parameter | Value |
| Manufacturer | Mitsubishi Electric / Powerex |
| Part Number | CM200DY-12H |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 600ย V |
| Collector Current (IC) | 200ย A (Tc=25ย ยฐC); 400ย A peak (pulse) |
| Max Collector Dissipation (Pc) | โย 780ย W @ Tc=25ย ยฐC |
| VCE(sat) | typ. โย 1.7ย V / max โย 2.2ย V @ VGE=15ย V, IC=200ย A, 25ย ยฐC |
| Gate-Emitter Voltage (max) | ยฑ20ย V |
| Gate Threshold VGE(th) | โย 5โ7ย V (typ. 6ย V) |
| Capacitances (typ.) | Cies โย 60โ70ย nF; Coes โย 3ย nF; Cres โย 1.6ย nF |
| Total Gate Charge | QG โย 1000โ1200ย nC @ 300โ600ย V, 200ย A, 15ย V |
| Diode (FWDi) | VF โย 2.0โ2.5ย V @ 200ย A; trr โย 0.2โ0.3ย ยตs |
| Thermal Resistance | RthJC(IGBT, 1/2) โย 0.10โ0.12ย ยฐC/W; RthJC(Diode, 1/2) โย 0.15โ0.18ย ยฐC/W |
| Isolation | 2.5ย kVRMS / 1ย min (terminalsโbaseplate) |
| Operating / Storage | Tj โ40โฆ+150ย ยฐC; Tstg โ40โฆ+125ย ยฐC |
| Dimensions / Weight | ~108ย รย 62ย รย 30ย mm; โย 380โ420ย g |
| Torque (typ.) | M6 terminals & mounting โย 4.5ย Nยทm (40ย in-lb) |
| Configuration | Dual (2-pack half-bridge) |
| Module | Applications | Notes |
| CM200DY-12H | UPS inverter/rectifier bridges; industrial motor drives; welding/laser power | Confirm gate/aux pinout and mechanical outline vs. OEM drawings; maintain isolation and heatsink flatness. |