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$177.00
Voltage | AH/kVA | Length | Width | Height | Weight |
---|---|---|---|---|---|
600 V | 100 A | N/A | N/A | N/A | 570 g |
Voltage | 600 V |
Amp/H | 100 A |
Length | N/A |
Width | N/A |
Height | N/A |
Weight | 570 g |
600ย V, 100ย A six-pack IGBT power module (three-phase bridge) with discrete fast free-wheel diodes and an insulated baseplate.
Common in UPS inverters, motor/servo drives, welders, and high-power supplies; offers low VCE(sat), modest gate charge, and robust isolation for straightforward thermal and EMC design.
Parameter | Value |
Manufacturer | Mitsubishi Electric |
Part Number | CM100TU-12H |
Device Type | Six-pack IGBT module (3-phase bridge) with antiparallel diodes |
Collector-Emitter Voltage (VCES) | 600ย V |
Collector Current (IC) | 100ย A (per module, Tc=25ย ยฐC); 200ย A peak (pulse) |
Max Collector Dissipation (Pc) | 400ย W (Tj<150ย ยฐC) |
VCE(sat) | typ. 2.4ย V / max 3.0ย V @ VGE=15ย V, IC=100ย A, 25ย ยฐC; โย 2.6ย V @ 125ย ยฐC |
Gate-Emitter Voltage (max) | ยฑ20ย V |
Gate Threshold VGE(th) | 4.5ย โย 7.5ย V (typ. 6ย V) |
Gate Charge (typ.) | QG โย 200ย nC (VCC=300ย V, IC=100ย A, 15ย V) |
Capacitances (typ.) | Cies โย 8.8ย nF; Coes โย 4.8ย nF; Cres โย 1.3ย nF |
Switching Times (typ.) | td(on) 100ย ns; tr 250ย ns; td(off) 200ย ns; tf 300ย ns (VCC=300ย V, IC=100ย A, ยฑ15ย V, RG=6.3ย ฮฉ) |
Diode (typ.) | trr โ; Qrr โย 0.24ย ยตC @ IE=100ย A, di/dt=-200ย A/ยตs |
Thermal Resistance | RthJC(IGBT) โย 0.31ย ยฐC/W (per transistor, 1/6 module); RthJC(Diode) โย 0.70ย ยฐC/W |
Isolation | 2.5ย kVRMS (1ย min, terminals-to-baseplate) |
Torque / Mass | M4 terminals 1.3โ1.7ย Nยทm; M5 mounting 2.5โ3.5ย Nยทm; โย 570ย g |
Package / Footprint | Six-pack module; isolated baseplate; per datasheet outline drawing |
Configuration | Three-phase bridge (six IGBTs + six FWDi) |
Module | Applications | Notes |
CM100TU-12H | UPS inverters; AC motor/servo drives; welding & laser power; industrial power supplies | Observe torque specs, isolation test levels, and thermal interface guidance per datasheet. |