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$55.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 600 V | 300 A | N/A | N/A | N/A | 230 grams |
| Voltage | 600 V |
| Amp/H | 300 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 230 grams |
600ย V, 300ย A dual IGBT module (U-Series โ2-in-oneโ) used in UPS bridges, motor drives, and high-power inverters.
Integrated fast free-wheel diodes and an isolated baseplate simplify thermal/EMC design and enable clean commutation.
| Parameter | Value |
| Manufacturer | Fuji Electric |
| Part Number | 2MBI300U2B-060 |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 600ย V |
| Collector Current (IC) | 300ย A (continuous, Tc=25ย ยฐC); 600ย A (1ย ms pulse) |
| Collector Power Dissipation (Pc) | 1000ย W @ Tc=25ย ยฐC |
| VCE(sat) (25ย ยฐC / 125ย ยฐC) | typ. โย 2.10ย V / โ ; max โย 2.30โ2.45ย V @ 300ย A, 15ย V gate |
| Gate-Emitter Voltage (max) | ยฑ20ย V |
| Gate Threshold VGE(th) | โย 6.7โ7.7ย V |
| Capacitance (typ.) | Cies โย 23ย nF @ VCE=10ย V, 1ย MHz |
| Switching Times (typ.) | ton โย 0.40ย ยตs; tr(i) โย 0.07ย ยตs; toff โย 0.60ย ยตs; tf โย 0.16ย ยตs (VCC=300ย V, IC=300ย A, VGE=ยฑ15ย V, RG=9.1ย ฮฉ) |
| Diode (typ.) | trr โย 0.35ย ยตs @ IF=300ย A; VF โย 1.6โ1.95ย V |
| Thermal Resistance | RthJC(IGBT) โย 0.125ย ยฐC/W; RthJC(Diode) โย 0.23ย ยฐC/W; RthCF (with grease) โย 0.025ย ยฐC/W |
| Isolation | 2.5ย kVRMS / 1ย min (baseplateโterminals) |
| Operating Junction Range | โ40ย ยฐC to +150ย ยฐC |
| Package / Footprint | Approx. 92ย รย 45ย รย 30ย mm; 7-pin, screw terminals (U2B) |
| Configuration | Dual (2-pack half-bridge) |
| Module | Applications | Notes |
| 2MBI300U2B-060 | UPS inverter/rectifier bridges; high-power motor drives; energy-storage choppers; welding/laser power | Confirm gate/aux pinout and mechanical footprint vs. OEM drawings; maintain isolation and heatsink flatness. |
