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$50.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 600 V | 400 A | N/A | N/A | N/A | ≈ 430 – 465 g |
| Voltage | 600 V |
| Amp/H | 400 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈ 430 – 465 g |
600 V / 400 A dual IGBT power module that integrates a complete half-bridge with fast free-wheel diodes. Designed for
high-power switching and motor-control inverters; terminals are isolated from the case for easier heatsink design.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG400J1US1 |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC) | 400 A (DC) |
| Pulse Collector Current (ICP) | 800 A (≈1 ms) |
| Gate-Emitter Voltage (VGES) | ±20 V |
| VCE(sat) (typ./max) | ~2.1 / ≤ 2.7 V @ IC=400 A, VGE=15 V, 25 °C |
| Gate Threshold (VGE(off)) | ~3.0–6.0 V (typ. ~5–7 V) |
| Input Capacitance (Cies) | tens of nF class (1 MHz, VCE=10 V) |
| Switching (typ.) | Sub-µs turn-on/turn-off; tf ≲ 0.3 µs |
| Diode (per leg) | Fast/soft recovery; trr ≲ 0.15–0.3 µs |
| Thermal Resistance RthJC | ~0.06–0.10 °C/W (IGBT leg) |
| Isolation (terminals→base) | 2.5 kVRMS / 1 min |
| Operating / Storage | Tj ≤ 150 °C / Tstg −40…+125 °C |
| Package | Toshiba 2-109C-series isolated-base module |
| Configuration | Dual (2-device) half-bridge |
| Module | Applications | Notes |
| MG400J1US1 | UPS; AC motor drives; DC choppers; welders; SMPS | Confirm pinout, torque, and cooling; observe isolation rating. |
