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$69.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 600 V | 300 A | N/A | N/A | N/A | ≈ 210 g |
| Voltage | 600 V |
| Amp/H | 300 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈ 210 g |
600 V / 300 A dual IGBT power module for UPS inverters, motor drives, and high-power SMPS. Each IGBT includes a
reverse-connected fast/soft recovery diode. Insulated mounting base simplifies heatsinking and grounding.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG300J2YS40 |
| Device Type | Dual IGBT half-bridge with antiparallel fast/soft diodes |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC) | 300 A (DC) |
| Pulse Collector Current (ICP) | 600 A (1 ms) |
| Forward Diode Current (IF / IFM) | 300 A DC / 600 A (1 ms) |
| Gate-Emitter Voltage (VGES) | ±20 V |
| VCE(sat) (typ./max) | 2.7 / 3.5 V @ IC=300 A, VGE=15 V, 25 °C |
| Gate Leakage / Cut-off | IGES ≤ 500 µA (VGE=±20 V); ICES ≤ 2.0 mA (VCE=600 V) |
| Gate Threshold (VGE(off)) | 3.0–6.0 V @ IC=300 mA, VCE=5 V |
| Input Capacitance (Cies) | ≈ 27,200 pF (VCE=10 V, f=1 MHz) |
| Switching (typ./max) | td(on) 0.4/0.8 µs; tr 0.3/0.6 µs; td(off) 0.6/1.0 µs; tf 0.18/0.35 µs |
| Diode (per leg) | VF 1.7 V typ / 2.5 V max @ 300 A; trr 0.08–0.15 µs |
| Thermal Resistance RthJC | Transistor 0.104 °C/W; Diode 0.25 °C/W |
| Collector Power Dissipation (PC) | 1200 W @ TC=25 °C |
| Isolation (terminals→base) | 2.5 kVRMS / 1 min |
| Operating / Storage | Tj ≤ 150 °C / Tstg −40…+125 °C |
| Package / Mass | Toshiba 2-109C1A; mass — |
| Screw Torque (Terminal / Mount) | 3 / 3 N·m |
| Configuration | Dual (2-device) half-bridge |
| Module | Applications | Notes |
| MG300J2YS40 | UPS; AC drives; DC choppers; welders; SMPS | Verify pinout, gate-drive limits, torque, and cooling; observe isolation rating. |
