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$45.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 600 V | 100 A | N/A | N/A | N/A | ≈ 195 g |
| Voltage | 600 V |
| Amp/H | 100 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈ 195 g |
600 V / 100 A dual IGBT power module for UPS inverters, motor drives, and high-power SMPS. Each IGBT includes a reverse-connected fast/soft recovery diode. Insulated mounting base simplifies heatsinking and grounding.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG100J2YS40 |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC) | 100 A (DC) |
| Pulse Collector Current (ICP) | 200 A (1 ms) |
| Forward Diode Current (IF/IFM) | 100 A / 200 A |
| Gate-Emitter Voltage (VGES) | ±20 V |
| VCE(sat) (max) | ≤ 2.70 V @ IC=100 A, VGE=15 V, 25 °C |
| Switching (typ./max) | tf ≤ 0.30 µs (IGBT); diode trr ≤ 0.15 µs |
| Collector Power Dissipation (PC) | 450 W @ TC=25 °C |
| Junction / Storage Temp. | Tj ≤ 150 °C / Tstg −40…+125 °C |
| Isolation (terminals→base) | 2.5 kVRMS for 1 min |
| Package / Mass | 2-in-one isolated-base module; ≈ 202 g (typ.) |
| Configuration | Dual (2-pack) half-bridge |
| Module | Applications | Notes |
| MG100J2YS40 | UPS; AC drives; DC choppers; welders; SMPS | Confirm pinout, gate-drive limits, torque, and cooling; observe isolation rating. |
