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$44.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 600 V | 75 A | N/A | N/A | N/A | 350 g |
| Voltage | 600 V |
| Amp/H | 75 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 350 g |
600ย V, 75ย A dual IGBT power module (half-bridge) with reverse-connected super-fast free-wheel diodes.
Low VCE(sat), moderate gate charge, and a 2.5ย kVRMS insulated baseplate for straightforward thermal/EMC design in UPS,
motor drives, and high-power inverters.
| Parameter | Value |
| Manufacturer | Powerex (Mitsubishi build) |
| Part Number | CM75DU-12F |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 600ย V |
| Collector Current (IC) | 75ย A (Tc=25ย ยฐC); 150ย A peak (pulse) |
| Max Collector Dissipation (Pc) | 290ย W @ Tc=25ย ยฐC |
| VCE(sat) | typ. 1.6ย V / max 2.2ย V @ VGE=15ย V, IC=75ย A, 25ย ยฐC (typ. 1.6ย V @ 125ย ยฐC) |
| Gate-Emitter Voltage (max) | ยฑ20ย V |
| Gate Threshold VGE(th) | 5โ7ย V (typ. 6ย V) |
| Capacitances (typ.) | Cies 20ย nF; Coes 1.4ย nF; Cres 0.75ย nF |
| Switching Times (typ.) | td(on) 100ย ns; tr 80ย ns; td(off) 300ย ns; tf 250ย ns (VCC=300ย V, IC=75ย A, ยฑ15ย V, RG=8.3ย ฮฉ) |
| Diode (FWDi) | trr 150ย ns; Qrr 1.4ย ยตC; VEC max 2.6ย V @ 75ย A |
| Thermal Resistance | RthJC(IGBT, 1/2) 0.43ย ยฐC/W (0.29ย ยฐC/W under-chip ref.); RthJC(Diode, 1/2) 0.90ย ยฐC/W; RthCF(module, greased) 0.055ย ยฐC/W |
| Isolation | 2.5ย kVRMS / 1ย min (terminalsโbaseplate) |
| Operating / Storage | Tj โ40โฆ+150ย ยฐC; Tstg โ40โฆ+125ย ยฐC |
| Hardware / Mass | M5 terminals & mounts, 40ย in-lb; โย 310ย g |
| Package / Footprint | Approx. 94ย รย 48ย รย 30ย mm; 80ย mm hole spacing (see outline) |
| Configuration | Dual (2-pack half-bridge) |
| Module | Applications | Notes |
| CM75DU-12F | UPS inverter/rectifier bridges; AC motor drives; battery-powered supplies | Observe 2.5ย kV isolation and thermal interface guidance; torque M5 to 40ย in-lb. |
