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$146.00
| Voltage | AH/kVA | Length | Width | Height | Weight | 
|---|---|---|---|---|---|
| 600 V | 300 A | N/A | N/A | N/A | 270 g | 
| Voltage | 600 V | 
| Amp/H | 300 A | 
| Length | N/A | 
| Width | N/A | 
| Height | N/A | 
| Weight | 270 g | 
600ย V, 300ย A dual IGBT power module (two-transistor half-bridge) with reverse-connected super-fast free-wheel diodes
and an insulated baseplate. A proven workhorse for UPS bridges, industrial drives, and general-purpose inverters where low
VCE(sat), wide SOA, and straightforward thermal integration are required.
| Parameter | Value | 
| Manufacturer | Powerex (Mitsubishi build) | 
| Part Number | CM300DY-12H | 
| Device Type | Dual IGBT half-bridge with antiparallel diodes | 
| Collector-Emitter Voltage (VCES) | 600ย V | 
| Collector Current (IC) | 300ย A (Tc=25ย ยฐC); 600ย A peak (pulse) | 
| Max Collector Dissipation (Pc) | โย 1.2ย kW @ Tc=25ย ยฐC | 
| VCE(sat) | typ. โย 1.8โ2.1ย V / max โย 2.5ย V @ VGE=15ย V, IC=300ย A, 25ย ยฐC | 
| Gate-Emitter Voltage (max) | ยฑ20ย V | 
| Gate Threshold VGE(th) | โย 5โ7ย V (typ. 6ย V) | 
| Capacitances (typ.) | Cies โย 60โ70ย nF; Coes โย 3ย nF; Cres โย 1.6ย nF | 
| Total Gate Charge | QG โย 1000โ1200ย nC @ 300โ600ย V, 300ย A, 15ย V | 
| Diode (FWDi) | VF โย 2.2โ2.8ย V @ 300ย A; trr โย 0.2โ0.3ย ยตs | 
| Thermal Resistance | RthJC(IGBT, 1/2) โย 0.08โ0.10ย ยฐC/W; RthJC(Diode, 1/2) โย 0.12โ0.15ย ยฐC/W | 
| Isolation | 2.5ย kVRMS / 1ย min (terminalsโbaseplate) | 
| Operating / Storage | Tj โ40โฆ+150ย ยฐC; Tstg โ40โฆ+125ย ยฐC | 
| Dimensions / Weight | ~108ย รย 62ย รย 30ย mm; โย 500โ600ย g | 
| Torque (typ.) | M6 terminals & mounting โย 4.5ย Nยทm (โย 40ย in-lb) | 
| Configuration | Dual (2-pack half-bridge) | 
| Module | Applications | Notes | 
| CM300DY-12H | UPS inverter/rectifier bridges; industrial motor drives; welding/laser power | Confirm gate/aux pinout and mechanical outline vs. OEM drawings; maintain isolation and heatsink flatness. |