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$128.56
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 600 V | N/A | 150 A | N/A | N/A | N/A | ≈  430 g |
| Voltage | 600 V |
| WPC | N/A |
| Amp/H | 150 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈  430 g |
600Â V / 150Â A dual IGBT power module for UPS inverters, motor drives, and high-power SMPS. Each IGBT includes a reverse-connected fast/soft-recovery diode. Insulated base simplifies heatsinking and grounding.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG150J2YS40 |
| Device Type | Dual N-channel IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 600Â V |
| Continuous Collector Current (IC) | 150Â A (DC) |
| Pulse Collector Current (ICP) | 300Â A (1Â ms) |
| Forward Diode Current (IF/IFM) | 150Â A / 300Â A (1Â ms) |
| Gate-Emitter Voltage (VGES) | ±20 V |
| VCE(sat) (typ./max) | 2.10 / 2.70 V @ IC=150 A, VGE=15 V, 25 °C |
| Gate Threshold (VGE(off)) | 5.0–8.0 V (typ. 7.0 V) |
| Input Capacitance (Cies) | ≈ 14,200 pF (VCE=10 V, f=1 MHz) |
| Switching (typ./max) | td(on) 0.15–0.30 µs; tr 0.15–0.30 µs; td(off) 0.20–0.40 µs; tf 0.15–0.30 µs; toff 0.50–1.00 µs |
| Diode (per leg) | VF 2.30 V typ / 3.00 V max @ 150 A; trr 0.08–0.15 µs |
| Thermal Resistance | RthJC(IGBT) 0.16 °C/W; RthJC(Diode) 0.35 °C/W |
| Collector Power Dissipation | 780 W @ TC=25 °C |
| Operating / Storage | Tj ≤ 150 °C / Tstg −40…+125 °C |
| Isolation (terminals→base) | 2.5 kVRMS / 1 min |
| Package / Case | Toshiba 2-95A1A isolated-base module (flange mount) |
| Recommended Torque | ≈ 3 N·m (terminals / mounting) |
| Configuration | Dual (2-pack) half-bridge |
| Module | Applications | Notes |
| MG150J2YS40 | UPS; AC drives; DC choppers; welders; SMPS | Confirm pinout and torque; observe isolation and cooling requirements. |
