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$128.56
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 600 V | N/A | 150 A | N/A | N/A | N/A | ≈  430 g |
| Voltage | 600 V |
| WPC | N/A |
| Amp/H | 150 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈  430 g |
The Toshiba MG150J2YS40 is a high-power 600 V, 150 A silicon N-channel IGBT module containing a complete half-bridge power stage in a single isolated package. Two IGBT switching elements and their built-in reverse-connected freewheel diodes provide a compact power stage for industrial inverter and motor-control applications.
Designed for high-current switching, the MG150J2YS40 combines low collector-emitter saturation voltage, fast switching characteristics and high electrical isolation. Typical applications include UPS inverters, AC motor drives, DC choppers, welding equipment, switched-mode power supplies and other industrial power-conversion systems.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG150J2YS40 |
| Device Type | Silicon N-channel IGBT power module |
| Circuit Configuration | Complete half-bridge / 2U configuration with built-in freewheel diodes |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC) | 150 A |
| Pulse Collector Current (ICP) | 300 A, 1 ms |
| Continuous Diode Current (IF) | 150 A |
| Peak Diode Current (IFM) | 300 A, 1 ms |
| Gate-Emitter Voltage (VGES) | ±20 V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.10 V typ. / 2.70 V max @ IC = 150 A, VGE = 15 V |
| Gate Threshold Voltage (VGE(off)) | 5.0 V min / 7.0 V typ / 8.0 V max |
| Input Capacitance (Cies) | 14,200 pF typical @ VCE = 10 V, f = 1 MHz |
| Turn-On Delay Time (td(on)) | 0.15 µs typ. / 0.30 µs max |
| Rise Time (tr) | 0.15 µs typ. / 0.30 µs max |
| Turn-On Time (ton) | 0.50 µs typ. / 1.00 µs max |
| Turn-Off Delay Time (td(off)) | 0.20 µs typ. / 0.40 µs max |
| Fall Time (tf) | 0.15 µs typ. / 0.30 µs max |
| Turn-Off Time (toff) | 0.50 µs typ. / 1.00 µs max |
| Switching Test Conditions | VCC = 300 V, IC = 150 A, VGE = ±15 V, RG = 6.2 Ω |
| Diode Forward Voltage (VF) | 2.30 V typ. / 3.00 V max @ IF = 150 A |
| Diode Reverse-Recovery Time (trr) | 0.08 µs typ. / 0.15 µs max |
| Thermal Resistance Rth(j-c) — IGBT | 0.16°C/W max |
| Thermal Resistance Rth(j-c) — Diode | 0.35°C/W max |
| Collector Power Dissipation | 780 W @ TC = 25°C |
| Maximum Junction Temperature | 150°C |
| Storage Temperature | −40°C to +125°C |
| Isolation Voltage | 2500 V AC for 1 minute, terminals-to-base |
| Package | Toshiba isolated-base 2U power module |
| Configuration | Two IGBT elements in complete half-bridge configuration |
| Module | Representative Applications | Replacement Notes |
| MG150J2YS40 | UPS inverters; AC motor drives; DC choppers; welders; switched-mode power supplies; industrial inverter systems | Verify 600 V rating, 150 A current capability, half-bridge topology, gate-drive requirements, terminal layout, dimensions and cooling requirements before substitution. |
