Toshiba – MG75J1ZS50 – IGBT Power Module – 600V 75A – Reclaimed Part

Toshiba — MG75J1ZS50 IGBT Power Module 600 V • 75 A • Single N-Channel IGBT • Built-In Freewheel Diode • Isolated Baseplate

What it is

The Toshiba MG75J1ZS50 is a 600 V, 75 A silicon N-channel IGBT power module designed for high-power switching and motor-control applications. The module incorporates a single IGBT switching element with a built-in reverse-connected freewheel diode and electrically isolated electrodes for straightforward heatsink integration.

With high input impedance, fast switching, low saturation voltage and 150 A short-duration pulse capability, the MG75J1ZS50 is well suited to industrial motor drives, UPS systems, inverters, DC choppers and other power-conversion equipment requiring a compact high-speed switching module.

At-a-Glance

• Voltage Rating: 600 V V_CES
• Collector Current: 75 A continuous
• Pulse Current: 150 A, 1 ms
• Configuration: Single-switch / 1U
• Device Type: Silicon N-channel IGBT
• Integrated Diode: Built-in reverse-connected freewheel diode
• V_CE(sat): 2.70 V maximum @ 75 A
• Package: Toshiba 2-94D2A • Approx. 202 g

Features

• 600 V / 75 A power class — designed for industrial high-power switching and motor-control applications.
• Single-switch configuration — one N-channel IGBT switching element with an integrated freewheel diode.
• Low saturation voltage — V_CE(sat) rated at 2.70 V maximum at 75 A.
• High-speed switching — fall time t_f rated at 0.30 µs maximum.
• Fast-recovery diode — reverse-recovery time t_rr rated at 0.15 µs maximum.
• High input impedance — insulated-gate construction simplifies gate-drive requirements.
• Electrically isolated case — power electrodes are isolated from the case for simplified heatsink integration.

Technical Specifications

Applications / Replacement Considerations