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$132.16
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 600 V | N/A | 300 A | N/A | N/A | N/A | ≈  450 – 470 g |
| Voltage | 600 V |
| WPC | N/A |
| Amp/H | 300 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈  450 – 470 g |
600Â V / 300Â A dual IGBT power module for UPS inverters, motor drives, and high-power SMPS. Each IGBT includes a reverse-connected fast/soft recovery diode. Insulated mounting base simplifies heatsinking and grounding.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG300J2YS45 |
| Device Type | Dual IGBT half-bridge with antiparallel fast/soft diodes |
| Collector-Emitter Voltage (VCES) | 600Â V |
| Continuous Collector Current (IC) | 300Â A (DC) |
| Pulse Collector Current (ICP) | 600Â A (1Â ms) |
| Forward Diode Current (IF / IFM) | 300Â A DC / 600Â A (1Â ms) |
| Gate-Emitter Voltage (VGES) | ±20 V |
| VCE(sat) (typ./max) | 2.1 / 2.5 V @ IC=300 A, VGE=15 V, 25 °C |
| Gate Threshold (VGE(off)) | 3.0–6.0 V @ IC=300 mA, VCE=5 V |
| Input Capacitance (Cies) | ≈ 27,000–28,000 pF (VCE=10 V, f=1 MHz) |
| Switching (typ.) | td(on) ~0.4 µs; tr ~0.3 µs; td(off) ~0.6 µs; tf ~0.18 µs |
| Diode (per leg) | VF ~1.7 V typ / ≤ 2.5 V max @ 300 A; trr ~0.08–0.15 µs |
| Thermal Resistance RthJC | Transistor ~0.10 °C/W; Diode ~0.25 °C/W |
| Collector Power Dissipation (PC) | ≈ 1200–1300 W @ TC=25 °C |
| Isolation (terminals→base) | 2.5 kVRMS / 1 min |
| Operating / Storage | Tj ≤ 150 °C / Tstg −40…+125 °C |
| Package / Mass | Toshiba 2-109C-series isolated-base; ~450–470 g |
| Screw Torque (Terminal / Mount) | ≈ 3 / 3 N·m |
| Configuration | Dual (2-device) half-bridge |
| Module | Applications | Notes |
| MG300J2YS45 | UPS; AC drives; DC choppers; welders; SMPS | Verify pinout, gate-drive limits, torque, and cooling; observe isolation rating. |
