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FUJI ELECTRIC – 2MBI75N-120 – IGBT Power Module – 1200V 75A – Reclaimed Part

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Manufacturer

,

OEM Part Number

2MBI75N 120

GPS Part Number

27-FUJ-2MBI75N 120

Categories

Tags

Price:

$74.00

Specifications
Voltage WPC AH/kVA Length Width Height Weight
1200 V N/A 75 A N/A N/A N/A 200 grams
Voltage 1200 V
WPC N/A
Amp/H 75 A
Length N/A
Width N/A
Height N/A
Weight 200 grams
Fuji Electric — 2MBI75N-120 IGBT Power Module 1200 V • 75 A • Dual IGBT Half-Bridge • Integrated Freewheel Diodes • Isolated Baseplate
What it is

The Fuji Electric 2MBI75N-120 is a 1200 V, 75 A dual IGBT power module incorporating two IGBTs and antiparallel freewheel diodes in a 2-in-1 half-bridge configuration. Designed for industrial power conversion, the module combines high-voltage switching capability with an electrically isolated baseplate for efficient heatsink mounting.

The 2MBI75N-120 is commonly suited to UPS inverter and rectifier stages, industrial motor drives, DC-link switching, servo systems and other high-power inverter applications. Its N-series construction provides a robust switching platform for maintaining legacy industrial power equipment.

At-a-Glance
  • Voltage Rating: 1200 V
  • Collector Current: 75 A
  • Topology: Dual IGBT / 2-in-1 half-bridge
  • Freewheel Diodes: Integrated antiparallel diodes
  • Mounting: Screw-terminal module with isolated baseplate
  • Applications: UPS systems; industrial motor drives; servo systems; DC choppers; inverters
  • Condition: Reclaimed part
Features
  • 1200 V switching capability — designed for high-voltage industrial power-conversion applications.
  • 2-in-1 half-bridge — combines two IGBT switching devices in a single module.
  • Integrated freewheel diodes — provide reverse-current paths for inductive loads.
  • Robust switching performance — N-series construction designed for industrial inverter and drive applications.
  • Isolated baseplate — simplifies heatsink installation and electrical isolation.
Technical Specifications
Parameter Value
Manufacturer Fuji Electric
Part Number 2MBI75N-120
Device Type Dual IGBT half-bridge with antiparallel freewheel diodes
Collector-Emitter Voltage (VCES) 1200 V
Collector Current (IC) 75 A
Collector Power Dissipation Approx. 600 W @ TC = 25°C
VCE(sat) Approx. 3.3 V @ IC = 75 A, VGE = 15 V
Gate-Emitter Voltage ±20 V maximum
Isolation Voltage 2.5 kV RMS / 1 minute
Maximum Junction Temperature 150°C
Package / Footprint Approx. 94 × 34 × 30 mm; screw-terminal isolated-base module
Approximate Mass 180 g
Configuration Dual IGBT / 2-pack half-bridge
Condition Reclaimed part
Compatibility / Representative Uses
Module Applications Replacement Notes
2MBI75N-120 UPS inverter/rectifier stages; industrial motor drives; servo drives; DC choppers; power converters Verify complete part number, terminal configuration, gate connections, electrical ratings, mechanical footprint and cooling requirements before substitution.
Why Buy from Gruber
  • Power electronics expertise — Experience supporting UPS, inverter and critical-power systems using high-power semiconductor modules.
  • Legacy component support — Reclaimed and hard-to-find Fuji Electric IGBT modules for maintaining older industrial equipment.
  • Replacement assistance — Help matching electrical ratings, terminal configuration, gate-drive requirements and mechanical fit.

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