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SEMIKRON – SKM-75GAR-123D-02060 – IGBT Power Transistor – Reclaimed Part

ChatGPT Image Oct 1, 2025, 08_52_55 AM
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ChatGPT Image Oct 1, 2025, 08_52_55 AM
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Manufacturer

OEM Part Number

SKM-75GAR-123D-02060

GPS Part Number

27-SEM-SKM-75GAR-123D-02060

Categories

Tags

Price:

$50.00

Specifications
View Spec Sheet
Voltage AH/kVA Length Width Height Weight
1200 V 75 A N/A N/A N/A ≈ 750 g
Voltage 1200 V
Amp/H 75 A
Length N/A
Width N/A
Height N/A
Weight ≈ 750 g

Semikron — SKM75GAR123D IGBT Module
1200 V •
75 A •
Single IGBT (chopper) with antiparallel CAL free-wheel diode •
Isolated baseplate (SEMITRANS 2)
What it is

1200 V / 75 A single IGBT module from the SEMITRANS 2 family (customer option code “-02060”).
Used as a chopper/booster switch in UPS, motor drives, and industrial inverters. CAL (soft-recovery) diode is
integrated; isolated metal baseplate simplifies heatsinking and grounding.

At-a-Glance
  • Voltage / Current: 1200 V / 75 A (DC at TC=25 °C; ~50 A at 125 °C)
  • Topology: Single IGBT (GAR) with antiparallel CAL diode
  • Mounting: Screw-terminal module; isolated baseplate
  • Package: SEMITRANS 2; ~94 × 34 × 30 mm
  • Applications: Chopper/booster stage, UPS/DC link switching, industrial drives
Features
  • Soft-recovery CAL diode — reduced reverse-recovery losses and EMI.
  • Isolated baseplate — 2.5 kVRMS isolation test (typical SEMITRANS 2).
  • Rugged SOA — short-circuit rated (tSC ≈ 10 µs, per family datasheet).
  • SEMITRANS form factor — drop-in with GB/GAL/GAR variants.
Technical Specifications
Parameter Value
Manufacturer Semikron Danfoss
Part Number SKM75GAR123D (cust. option: SKM-75GAR-123D-02060)
Device Type Single IGBT (chopper) + antiparallel CAL diode
Collector-Emitter Voltage (VCES) 1200 V
Continuous Collector Current (IC) 75 A @ TC=25 °C (≈ 50 A @ 125 °C)
Gate-Emitter Voltage (VGES) ±20 V (±25 V abs. max family)
VCE(sat) (typ.) ≈ 2.1 V @ IC=75 A, VGE=15 V, 25 °C
Free-wheel Diode VF (typ.) ≈ 2.0 V @ IF=75 A, 25 °C (CAL)
Isolation 2.5 kVRMS / 1 min (terminals↔baseplate)
Thermal Resistance RthJC(IGBT) ≈ 0.35 K/W; RthJC(Diode) ≈ 0.55 K/W
Package / Dimensions SEMITRANS 2; ~94 × 34 × 30 mm
Configuration Single IGBT + antiparallel diode (GAR)
Why buy from Gruber
  • Tested pulls & new stock — Gate/diode behavior verified, continuity checked, baseplate flatness inspected.
  • Traceability — Each module labeled with a work-order ID for service history confidence.
  • Drop-in help — We match GAR vs. GB/GAL variants and fit them correctly in your frame.

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