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$80.00
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 1200 V | N/A | 200 A | N/A | N/A | N/A | 430 g |
| Voltage | 1200 V |
| WPC | N/A |
| Amp/H | 200 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 430 g |
The Powerex / Toshiba MG200Q2YS65H is a high-power
1200 V, 200 A dual IGBT module designed for demanding inverter and power-conversion applications.
The module contains two IGBTs arranged as a half-bridge, with integrated fast-recovery antiparallel diodes for handling
inductive current during switching. Its electrically isolated baseplate allows the module to be mounted directly to a
properly prepared heatsink while maintaining electrical isolation between the power circuit and chassis.
This module is well suited for legacy UPS systems, industrial motor drives, high-power inverter assemblies,
power conversion equipment, and other applications where a rugged 1200 V dual IGBT power stage is required.
Its screw-terminal construction also makes it particularly useful for servicing older industrial equipment
where maintaining the original module footprint and electrical configuration is important.
| Parameter | Value |
| Manufacturer | Powerex / Toshiba |
| Part Number | MG200Q2YS65H |
| Device Type | Dual IGBT half-bridge power module with antiparallel fast-recovery diodes |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Collector Current (IC) | 200 A DC @ TC=25 °C |
| Pulse Collector Current | 400 A (1 ms) |
| Diode Forward Current | 200 A DC; 400 A pulse |
| Collector Power Dissipation | 1310 W @ TC=25 °C |
| VCE(sat) | Approx. 3.0 V typ. @ 200 A, 25 °C; 4.0 V max |
| VCE(sat) at Elevated Temperature | Approx. 3.6 V typ. @ 200 A, 125 °C |
| Gate-Emitter Voltage (VGES) | ±20 V maximum |
| Gate Threshold Voltage | 4.0–7.0 V |
| Input Capacitance (Cies) | Approx. 17 nF |
| Turn-On Delay | Approx. 0.05 µs typical |
| Rise Time | Approx. 0.05 µs typical |
| Turn-Off Delay | Approx. 0.55 µs typical |
| Switching Energy | Eon ≈ 20 mJ; Eoff ≈ 17 mJ under specified test conditions |
| Diode Forward Voltage | Approx. 2.4 V typ. / 3.5 V max @ 200 A |
| Diode Reverse-Recovery Time | Approx. 0.1 µs typical |
| Thermal Resistance — IGBT | Rth(j-c) ≈ 0.095 °C/W |
| Thermal Resistance — Diode | Rth(j-c) ≈ 0.21 °C/W |
| Isolation Voltage | 2.5 kV RMS / 1 minute, terminals-to-baseplate |
| Operating Junction Temperature | −40 °C to +150 °C |
| Storage Temperature | −40 °C to +125 °C |
| Recommended Mounting / Terminal Torque | Approx. 3 N·m |
| Approximate Mass | 430 g |
| Configuration | Dual (2-pack half-bridge) |
| Module | Applications | Notes |
| MG200Q2YS65H | UPS inverter/rectifier bridges; industrial motor drives; high-power inverters; power conversion equipment | Verify electrical ratings, terminal arrangement, mounting dimensions, gate-drive requirements, and cooling against the original equipment before replacement. |



