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POWEREX – CM150DU-12F – Dual IGBT Power Module – 600V 150A – Reclaimed Part

Manufacturer

OEM Part Number

CM150DU-12F

GPS Part Number

27-PRX-CM150DU-12F

Tags

Price:

$127.00

Specifications
Voltage WPC AH/kVA Length Width Height Weight
600 V N/A 150 A N/A N/A N/A 310 g
Voltage 600 V
WPC N/A
Amp/H 150 A
Length N/A
Width N/A
Height N/A
Weight 310 g
Powerex / Mitsubishi Electric — CM150DU-12F IGBT Power Module
600 V • 150 A • 300 A Pulsed • Dual IGBT Half-Bridge • Super-Fast Free-Wheel Diodes • Isolated Baseplate • Reclaimed Part
What it is

The Powerex CM150DU-12F is a high-current 600 V, 150 A dual IGBT power module configured as a two-device half-bridge. Each IGBT incorporates a reverse-connected super-fast recovery diode, providing a complete high-power switching leg in a compact, electrically isolated package.

Designed for demanding power-conversion applications, the CM150DU-12F is well suited for UPS inverter and rectifier stages, industrial AC motor drives, servo systems, DC power converters, welding equipment, and other high-power switching systems. Its combination of low collector-emitter saturation voltage, fast switching characteristics, substantial pulse-current capability, and isolated baseplate makes it especially useful for servicing legacy critical-power equipment.

The module is rated for 150 A continuous collector current with pulse capability up to approximately 300 A. Typical VCE(sat) is approximately 1.6 V at 150 A, helping reduce conduction losses in high-current inverter stages. An isolation rating of 2.5 kV RMS for one minute between the power terminals and baseplate simplifies heatsink integration while maintaining electrical separation from the chassis.

At-a-Glance
  • Manufacturer: Powerex / Mitsubishi Electric
  • Part Number: CM150DU-12F
  • Voltage / Current: 600 V / 150 A continuous
  • Pulse Current: Up to 300 A
  • Topology: Dual IGBT half-bridge with antiparallel super-fast diodes
  • Mounting: Screw-mount with electrically isolated baseplate
  • Isolation: 2.5 kV RMS / 1 minute
  • Use Cases: UPS systems; AC motor drives; industrial inverters; servo drives; power converters; welding equipment
  • Condition: Reclaimed Part
Features
  • Low conduction loss — VCE(sat) approximately 1.6 V typical at 150 A and 25 °C, supporting efficient high-current operation.
  • Fast switching — Designed for high-power inverter and motor-control applications requiring controlled switching transitions.
  • Super-fast free-wheel diodes — Approximately 150 ns typical reverse-recovery time supports clean commutation with inductive loads.
  • 300 A pulse capability — Provides transient-current headroom for demanding power-conversion applications.
  • Robust gate design — ±20 V maximum gate-emitter rating with approximately 5–7 V threshold range.
  • Isolated baseplate — Allows direct heatsink mounting while maintaining electrical isolation from the chassis.
  • Serviceable industrial package — Heavy-duty screw terminals and standardized mounting make the module suitable for legacy equipment repair.
Technical Specifications
Parameter Value
Manufacturer Powerex / Mitsubishi Electric
Part Number CM150DU-12F
Device Type Dual IGBT half-bridge with antiparallel super-fast diodes
Collector-Emitter Voltage (VCES) 600 V
Continuous Collector Current (IC) 150 A @ TC=25 °C
Pulse Collector Current 300 A
Maximum Collector Dissipation Approximately 520 W @ TC=25 °C
VCE(sat) 1.6 V typ. / 2.2 V max @ VGE=15 V, IC=150 A, 25 °C
Gate-Emitter Voltage (VGES) ±20 V maximum
Gate Threshold VGE(th) 5–7 V; approximately 6 V typical
Input Capacitance (Cies) Approximately 41 nF
Output Capacitance (Coes) Approximately 2.7 nF
Reverse Transfer Capacitance (Cres) Approximately 1.5 nF
Total Gate Charge (QG) Approximately 930 nC @ 300 V, 150 A, 15 V
Turn-On Delay Approximately 120 ns typical
Rise Time Approximately 100 ns typical
Turn-Off Delay Approximately 350 ns typical
Fall Time Approximately 250 ns typical
Free-Wheel Diode Super-fast antiparallel diode integrated with each IGBT
Diode Forward Voltage VEC up to approximately 2.6 V @ 150 A
Diode Reverse-Recovery Time Approximately 150 ns typical
Reverse-Recovery Charge Approximately 2.8 µC typical
Thermal Resistance, IGBT RthJC approximately 0.24 °C/W per IGBT
Thermal Resistance, Diode RthJC approximately 0.47 °C/W per diode
Case-to-Heatsink Thermal Resistance Approximately 0.07 °C/W with proper thermal interface
Isolation Voltage 2.5 kV RMS / 1 minute, terminals-to-baseplate
Operating Junction Temperature −40 °C to +150 °C
Storage Temperature −40 °C to +125 °C
Terminal Torque M5 terminals approximately 2.5–3.5 N·m
Mounting Torque M6 mounting hardware approximately 3.5–4.5 N·m
Approximate Dimensions 94 × 48 × 30 mm class
Approximate Weight 310 g
Configuration Dual / 2-pack half-bridge
Condition Reclaimed Part
Compatibility / Representative Uses
Module Applications Replacement Notes
CM150DU-12F UPS inverter/rectifier bridges; AC motor and servo drives; industrial inverters; DC power converters; welding and industrial power systems Verify the complete part number, terminal layout, gate connections, mounting dimensions, electrical ratings, and heatsink requirements before replacement.
Why Buy from Gruber
  • Power electronics expertise — Experience supporting IGBT, SCR, and diode modules used in UPS systems and industrial critical-power equipment.
  • Hard-to-find legacy components — Reclaimed modules provide a practical repair option for equipment using obsolete or discontinued power semiconductors.
  • Tested reclaimed modules — Gate and diode behavior, semiconductor junctions, continuity, terminal condition, isolation, and baseplate condition can be evaluated prior to resale.
  • Traceability — Modules can be tracked through our service and inventory process for added replacement confidence.
  • Replacement assistance — We can help compare electrical ratings, circuit configuration, mounting dimensions, terminal layout, and thermal requirements for legacy equipment repairs.