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$59.23
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 600 V | N/A | 400 A | N/A | N/A | N/A | ≈  .5 kg |
| Voltage | 600 V |
| WPC | N/A |
| Amp/H | 400 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈  .5 kg |
600Â V / 400Â A dual IGBT power module that integrates a complete half-bridge with fast free-wheel diodes. Intended for high-power switching in UPS inverters, motor drives, welders, and SMPS; terminals are isolated from the baseplate for easier heatsink design.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG400J1US42 |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 600Â V |
| Continuous Collector Current (IC) | 400Â A (DC) |
| Pulse Collector Current (ICP) | 800 A (≈ 1 ms) |
| Gate-Emitter Voltage (VGES) | ±20 V |
| VCE(sat) (typ./max) | ~2.1 / ≤ 2.7 V @ IC=400 A, VGE=15 V, 25 °C |
| Gate Threshold (VGE(off)) | ≈ 3.0–6.0 V @ IC=300 mA, VCE=5 V |
| Input Capacitance (Cies) | ~28–40 nF (VCE=10 V, f=1 MHz) |
| Switching (typ.) | td(on) ~0.2–0.4 µs; tr ~0.15–0.30 µs; td(off) ~0.2–0.6 µs; tf ~0.15–0.30 µs |
| Diode (per leg) | VF ~2.3 V typ / ≤ 3.0 V max @ 400 A; trr ~0.08–0.30 µs |
| Thermal Resistance RthJC | Transistor ~0.06–0.10 °C/W; Diode ~0.18–0.22 °C/W |
| Collector Power Dissipation (PC) | ≈ 2000 W @ TC=25 °C |
| Isolation (terminals→base) | 2.5 kVRMS / 1 min |
| Package / Mass | Toshiba 2-109A4A isolated-base; ≈ 0.5 kg class |
| Configuration | Dual (2-device) half-bridge |
| Module | Applications | Notes |
| MG400J1US42 | UPS; AC motor drives; DC choppers; welders; SMPS | Verify pinout, gate-drive limits, torque, and cooling; observe isolation rating. |
