Toshiba โ MG300Q2YS45 IGBT Module
1200ย V โข
300ย A โข
Dual half-bridge (2ย IGBTs + diodes) โข
Isolated baseplate
What it is
1200ย V / 300ย A dual IGBT power module with integrated free-wheel diodes for inverters and motor drives. Insulated base simplifies heatsinking.
At-a-Glance
- Voltage / Current: 1200ย V / 300ย A
- Topology: Dual half-bridge with antiparallel diodes
- Mounting: Screw terminals; isolated baseplate
- Uses: UPS inverters; AC drives; choppers; welders
Technical Specifications
| Parameter |
Value |
| Manufacturer |
Toshiba |
| Part Number |
MG300Q2YS45 |
| Device Type |
Dual IGBT half-bridge + diodes |
| Collector-Emitter Voltage |
1200ย V |
| Continuous Collector Current |
300ย A |
| Pulse Collector Current |
600ย A |
| Gate-Emitter Voltage |
ยฑ20ย V |
| VCE(sat) |
โย 3.6ย V @ 300ย A |
| Isolation (terminalsโbase) |
2.5ย kVย RMS, 1ย min |
| Operating / Storage |
Tj 150ย ยฐC max / Tstg โ40โฆ+125ย ยฐC |
| Package / Mass |
Isolated-base module; ~430โ465ย g |
| Configuration |
Dual (2-device) half-bridge |
Compatibility / Representative Uses
| Module |
Applications |
Notes |
| MG300Q2YS45 |
UPS; drives; choppers; welders |
Confirm pinout, torque, cooling. |
Why buy from Gruber
- Tested pulls & new stock
- Traceability
- Drop-in help