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$68.64
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 600 V | N/A | 300 A | N/A | N/A | N/A | ≈  210 g |
| Voltage | 600 V |
| WPC | N/A |
| Amp/H | 300 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈  210 g |
The Toshiba MG300J2YS40 is a high-current 600 V, 300 A silicon N-channel IGBT power module containing a complete half-bridge in a single industrial package. Two IGBT switching elements and their built-in reverse-connected freewheel diodes provide a compact high-power switching stage for inverter and motor-control applications.
Designed for high-power switching, the MG300J2YS40 combines high input impedance, fast switching and low saturation voltage with 600 A short-duration pulse capability. The power electrodes are electrically isolated from the case, simplifying heatsink integration in UPS systems, AC motor drives, DC choppers, welding equipment and other industrial power-conversion systems.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG300J2YS40 |
| Device Type | Silicon N-channel IGBT power module |
| Circuit Configuration | Complete half-bridge / 2U configuration with built-in freewheel diodes |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC) | 300 A |
| Pulse Collector Current (ICP) | 600 A, 1 ms |
| Continuous Diode Current (IF) | 300 A |
| Peak Diode Current (IFM) | 600 A, 1 ms |
| Gate-Emitter Voltage (VGES) | ±20 V |
| Gate Leakage Current (IGES) | ±500 nA max @ VGE = ±20 V |
| Collector Cut-Off Current (ICES) | 2.0 mA max @ VCE = 600 V |
| Gate Threshold / Cut-Off Voltage | 3.0–6.0 V @ IC = 300 mA, VCE = 5 V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.7 V typ. / 3.5 V max @ IC = 300 A, VGE = 15 V |
| Input Capacitance (Cies) | Approx. 27,200 pF @ VCE = 10 V, f = 1 MHz |
| Turn-On Delay (td(on)) | 0.4 µs typ. / 0.8 µs max |
| Rise Time (tr) | 0.3 µs typ. / 0.6 µs max |
| Turn-Off Delay (td(off)) | 0.6 µs typ. / 1.0 µs max |
| Fall Time (tf) | 0.18 µs typ. / 0.35 µs max |
| Diode Forward Voltage (VF) | 1.7 V typ. / 2.5 V max @ IF = 300 A |
| Diode Reverse-Recovery Time (trr) | 0.08 µs typ. / 0.15 µs max |
| Thermal Resistance Rth(j-c) — IGBT | 0.104°C/W max |
| Thermal Resistance Rth(j-c) — Diode | 0.25°C/W max |
| Collector Power Dissipation | 1200 W @ TC = 25°C |
| Maximum Junction Temperature | 150°C |
| Storage Temperature | −40°C to +125°C |
| Isolation Voltage | 2500 V AC for 1 minute, terminals-to-base |
| Package | Toshiba 2-109C1A |
| Terminal / Mounting Torque | 3 N·m / 3 N·m |
| Configuration | Two IGBT elements forming one complete half-bridge |
| Module | Representative Applications | Replacement Notes |
| MG300J2YS40 | UPS inverters; AC motor drives; DC choppers; welding equipment; switched-mode power supplies; industrial inverter systems | Verify 600 V rating, 300 A current capability, complete half-bridge topology, gate-drive requirements, terminal layout, mechanical fit and cooling requirements before substitution. |
