Toshiba – MG50Q2YS50 – IGBT Half-Bridge Power Module – 1200V 50A – Reclaimed Part

Toshiba — MG50Q2YS50 IGBT Power Module 1200 V • 50 A • Complete Half-Bridge • 2 N-Channel IGBTs with Built-In Freewheel Diodes • Isolated Baseplate

What it is

The Toshiba MG50Q2YS50 is a 1200 V, 50 A silicon N-channel IGBT power module designed for high-power switching and motor-control applications. Toshiba integrates a complete half-bridge into one package, combining two IGBT switching elements with built-in reverse-connected freewheel diodes.

The MG50Q2YS50 combines high input impedance, high-speed switching and electrically isolated power terminals in a compact industrial module. It is well suited to motor drives, industrial inverters, UPS systems and other high-voltage power-conversion equipment requiring a complete IGBT half-bridge.

At-a-Glance

• Voltage Rating: 1200 V V_CES
• Current Rating: 50 A @ T_C = 80°C; 78 A @ T_C = 25°C
• Topology: Complete half-bridge / 2U configuration
• Switching Devices: 2 N-channel IGBTs with built-in freewheel diodes
• Pulse Current: 100 A @ 80°C; 156 A @ 25°C, 1 ms
• V_CE(sat): 2.8 V typ. / 3.6 V max @ 50 A, 25°C
• Isolation: 2500 V AC / 1 minute
• Package: Toshiba 2-94D4A • Approx. 202 g

Features

• Complete half-bridge — two IGBT switching elements integrated into one industrial power module.
• 1200 V blocking capability — designed for high-voltage inverter and motor-control applications.
• High-speed switching — fall time rated at 0.3 µs maximum under specified inductive-load conditions.
• Low saturation voltage — V_CE(sat) 2.8 V typical / 3.6 V maximum at 50 A and 25°C.
• Built-in freewheel diodes — reverse-connected diodes integrated with the IGBT switching elements.
• High input impedance — insulated-gate construction simplifies gate-drive requirements.
• Electrically isolated case — power electrodes are isolated from the case for simplified heatsink integration.

Technical Specifications

Applications / Replacement Considerations