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$146.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 1200 V | 50 A | N/A | N/A | N/A | ≈ 150 g |
| Voltage | 1200 V |
| Amp/H | 50 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈ 150 g |
1200 V / 50 A dual IGBT power module for UPS inverters, motor drives, and high-power SMPS. Each IGBT includes a
reverse‐connected fast/soft recovery diode. Insulated mounting base simplifies heatsinking and grounding.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG50Q2YS50 |
| Device Type | Dual IGBT half-bridge with antiparallel fast/soft diodes |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC) | 50 A @ TC=25 °C |
| Pulse Collector Current (ICM) | 100 A (≤ 1 ms) |
| Gate-Emitter Voltage (VGES) | ±20 V |
| VCE(sat) (typ./max) | ~2.5 V typ / ≤ 3.0 V @ IC=50 A, VGE=15 V, 25 °C |
| Gate Threshold (VGE(th)) | 4.5–7.5 V (typical ~6 V) |
| Capacitances (typ.) | Cies ~8 nF; Coes ~1.0 nF; Cres ~0.6 nF |
| Switching (typ.) | td(on) ~0.25 µs; tr ~0.12 µs; td(off) ~0.70 µs; tf ~0.18 µs |
| Diode (per leg) | VF ~2.2 V @ 50 A; trr ~0.10 µs |
| Thermal Resistance | RthJC(IGBT) ~0.12 °C/W; RthJC(Diode) ~0.25 °C/W |
| Isolation (terminals→base) | 2.5 kVRMS / 1 min |
| Operating / Storage | Tj −40…+150 °C / Tstg −40…+125 °C |
| Package / Dimensions / Mass | ≈ 94 × 34 × 30 mm; ~150 g |
| Configuration | Dual (2-pack) half-bridge |
| Module | Applications | Notes |
| MG50Q2YS50 | UPS; AC drives; DC choppers; welders; SMPS | Confirm footprint, pinout, gate drive and cooling specs. |
