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PRX – MG200Q2YS65H – IGBT Power Transistor – Reclaimed Part

MG200Q2YS65H_1
EE
MG200Q2YS65H_1
EE

Manufacturer

OEM Part Number

MG200Q2YS65H

GPS Part Number

27-PRX-MG200Q2YS65H

Categories

Tags

Price:

$80.00

Specifications
Voltage WPC AH/kVA Length Width Height Weight
1200 V N/A 200 A N/A N/A N/A 430 g
Voltage 1200 V
WPC N/A
Amp/H 200 A
Length N/A
Width N/A
Height N/A
Weight 430 g

Powerex / Toshiba — MG200Q2YS65H IGBT Module
1200 V •
200 A •
Dual half-bridge (2 IGBTs + antiparallel fast diodes) •
Isolated baseplate
What it is

1200 V, 200 A dual IGBT power module for high-power inverters, UPS bridges, and motor drives.
Integrated fast free-wheel diodes and a 2.5 kVRMS insulated baseplate simplify thermal and EMC design.

At-a-Glance
  • Voltage / Current: 1200 V / 200 A (400 A, 1 ms pulse)
  • Topology: Dual IGBT half-bridge with antiparallel diodes
  • Mounting: Screw-mount, isolated baseplate (3 N·m terminal & mount torque)
  • Use Cases: UPS inverter/rectifier stages; industrial motor drives; general-purpose inverters
  • Condition Options: New old stock or tested reclaimed pulls
Features
  • Low conduction loss — VCE(sat) typ. 3.0 V @ 200 A, 25 °C (≈ 3.6 V @ 125 °C; max 4.0 V).
  • Clean commutation — diode VF typ. 2.4 V (max 3.5 V); trr typ. 0.1 µs.
  • Isolated baseplate — 2.5 kVRMS/1 min base-to-terminals.
  • Service-friendly — ~430 g module with standard dual-pack footprint.
Technical Specifications
Parameter Value
Manufacturer Powerex / Toshiba
Part Number MG200Q2YS65H
Device Type Dual IGBT half-bridge with antiparallel fast diodes
Collector-Emitter Voltage (VCES) 1200 V
Collector Current (IC) 200 A (DC, Tc=25 °C); 400 A (1 ms pulse)
Forward Current (diode) 200 A DC; 400 A (1 ms pulse)
Collector Power Dissipation (PC) 1310 W @ Tc=25 °C
VCE(sat) (typ./max) 3.0 V typ @ 200 A, 25 °C; 3.6 V typ @ 200 A, 125 °C; 4.0 V max
Gate-Emitter Voltage (max) ±20 V
Gate Threshold / Leakage VGE(off) 4.0–7.0 V; IGES ≤ ±500 nA
Capacitance (typ.) Cies ≈ 17 nF (VCE=10 V, 1 MHz)
Switching (typ.) td(on) 0.05 µs; tr 0.05 µs; td(off) 0.55 µs; tf 0.05–0.15 µs
Switching Energy (typ.) Eon 20 mJ; Eoff 17 mJ @ VCC=600 V, IC=200 A, VGE=±15 V, RG=4.7 Ω, Tc=125 °C
Diode (typ./max) VF 2.4/3.5 V @ 200 A; trr 0.1 µs (IF=200 A)
Thermal Resistance Rth(j-c)(IGBT) 0.095 °C/W; Rth(j-c)(Diode) 0.21 °C/W
Isolation / Torque / Mass 2.5 kVRMS/1 min; terminals & mounts 3 N·m; ≈ 430 g
Operating / Storage Tj −40…+150 °C; Tstg −40…+125 °C
Package / Footprint Dual 2-in-one module; standard screw terminals; isolated copper baseplate
Configuration Dual (2-pack half-bridge)
Compatibility / Representative Uses
Module Applications Notes
MG200Q2YS65H UPS inverter/rectifier bridges; high-power motor drives; industrial inverters Observe 3 N·m torque, 2.5 kV isolation, and specified switching/thermal limits.
Why buy from Gruber
  • Tested pulls & new stock — Gate/diode behavior verified, continuity checked, baseplate flatness inspected.
  • Traceability — Each module labeled with a work-order ID for service history confidence.
  • UPS expertise — We match the exact module variant and hardware to your frame for a drop-in fix.

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