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$72.00
| Voltage | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|
| 1200 V | 100 A | N/A | N/A | N/A | 240 grams |
| Voltage | 1200 V |
| Amp/H | 100 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 240 grams |
1200ย V, 100ย A dual IGBT โ2-in-oneโ module (N-series) for UPS bridges, motor drives, and industrial inverters.
High-speed switching with integrated fast free-wheel diodes and an insulated baseplate for straightforward thermal/EMC design.
| Parameter | Value |
| Manufacturer | Fuji Electric |
| Part Number | 2MBI100NC-120 |
| Device Type | Dual IGBT half-bridge with antiparallel diodes |
| Collector-Emitter Voltage (VCES) | 1200ย V |
| Collector Current (IC) | 100ย A (cont., Tc=25ย ยฐC); 200ย A (1ย ms pulse) |
| Max Power Dissipation (PC) | 780ย W @ Tc=25ย ยฐC |
| VCE(sat) (max) | โย 3.3ย V @ VGE=15ย V, IC=100ย A |
| Gate-Emitter Voltage (max) | ยฑ20ย V |
| Gate Threshold VGE(th) | 4.5ย โย 7.5ย V |
| Capacitances (typ.) | Cies โย 16ย nF; Coes โย 5.8ย nF; Cres โย 5.16ย nF |
| Switching Times (typ./max) | ton 0.65/1.2ย ยตs; tr 0.25/0.6ย ยตs; toff 0.85/1.5ย ยตs; tf 0.35/0.5ย ยตs (VCC=600ย V, IC=100ย A, VGE=ยฑ15ย V, RG=9.1ย ฮฉ) |
| Diode (max) | VF โย 3.0ย V @ 100ย A; trr โย 0.35ย ยตs |
| Thermal Resistance | RthJC(IGBT) โย 0.16ย ยฐC/W; RthJC(Diode) โย 0.33ย ยฐC/W; RthCF โย 0.025ย ยฐC/W |
| Isolation | 2.5ย kVAC / 1ย min (baseplateโterminals) |
| Torque (rec.) | 3.5ย Nยทm (mounting & terminals; M5) |
| Operating / Storage | Tj up to +150ย ยฐC; Tstg โ40โฆ+125ย ยฐC |
| Mass | โย 240ย g |
| Package / Footprint | Fuji N-series 2-in-one; screw terminals; isolated baseplate |
| Configuration | Dual (2-pack half-bridge) |
| Module | Applications | Notes |
| 2MBI100NC-120 | UPS inverter/rectifier bridges; AC/DC servo drives; industrial motor drives; welding/laser power | Confirm gate/aux pinout and mechanical outline vs. OEM drawings; maintain isolation and heatsink flatness. |
