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TOSHIBA – MG300Q2YS45 – IGBT Power Transistor – Reclaimed Part

Manufacturer

OEM Part Number

MG300Q2YS45

GPS Part Number

27-TOS-MG300Q2YS45

Tags

Price:

$91.67

Specifications
Voltage WPC AH/kVA Length Width Height Weight
1200 V N/A 300 A N/A N/A N/A ≈  430 – 465 g
Voltage 1200 V
WPC N/A
Amp/H 300 A
Length N/A
Width N/A
Height N/A
Weight ≈  430 – 465 g

Toshiba — MG300Q2YS45 IGBT Module 1200 V • 300 A • Dual half-bridge (2 IGBTs + diodes) • Isolated baseplate

What it is

1200 V / 300 A dual IGBT power module with integrated free-wheel diodes for inverters and motor drives. Insulated base simplifies heatsinking.

At-a-Glance
  • Voltage / Current: 1200 V / 300 A
  • Topology: Dual half-bridge with antiparallel diodes
  • Mounting: Screw terminals; isolated baseplate
  • Uses: UPS inverters; AC drives; choppers; welders

Technical Specifications
Parameter Value
Manufacturer Toshiba
Part Number MG300Q2YS45
Device Type Dual IGBT half-bridge + diodes
Collector-Emitter Voltage 1200 V
Continuous Collector Current 300 A
Pulse Collector Current 600 A
Gate-Emitter Voltage ±20 V
VCE(sat) ≈ 3.6 V @ 300 A
Isolation (terminals→base) 2.5 kV RMS, 1 min
Operating / Storage Tj 150 °C max / Tstg −40…+125 °C
Package / Mass Isolated-base module; ~430–465 g
Configuration Dual (2-device) half-bridge

Compatibility / Representative Uses
Module Applications Notes
MG300Q2YS45 UPS; drives; choppers; welders Confirm pinout, torque, cooling.

Why buy from Gruber
  • Tested pulls & new stock
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