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$68.74
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 600 V | N/A | 200 A | N/A | N/A | N/A | ≈  210 g |
| Voltage | 600 V |
| WPC | N/A |
| Amp/H | 200 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈  210 g |
600Â V / 200Â A single power transistor module (silicon NPN triple-diffused Darlington) for high-power switching and motor control.
Includes a reverse-connected free-wheeling diode; collector is isolated from the case for easier heatsink design. :contentReference[oaicite:0]{index=0}
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG200H1AL2 |
| Device Type | Silicon NPN triple-diffused Darlington transistor w/ freewheel diode |
| Collector-Base Voltage (VCBO) | 600Â V |
| Collector-Emitter Sustaining (VCES(sus)) | 600Â V |
| Collector-Emitter Sustaining (VCEO(sus)) | 550Â V |
| Emitter-Base Voltage (VEBO) | 6Â V |
| Collector Current (DC / 1Â ms) | 200Â A / 400Â A |
| Forward Diode Current (DC / 1Â ms) | 200Â A / 400Â A |
| Base Current (IB) | 25Â A |
| hFE (min.) | 80 @ VCE=5Â V, IC=200Â A |
| VCE(sat) (max) | 2.0Â V @ IC=200Â A |
| VBE(sat) (max) | 2.7Â V @ IC=200Â A, IB=6Â A |
| Switching (max) | ton 2.0 µs; tstg 12 µs; tf 4.0 µs |
| Diode (per leg) | VF 1.5 V typ @ 200 A; trr 2.0 µs |
| Thermal Resistance | RthJC(transistor) 0.156 °C/W; RthJC(diode) 0.65 °C/W |
| Collector Power Dissipation | 800 W @ TC=25 °C |
| Isolation (terminals→base) | 2.5 kVRMS / 1 min |
| Operating / Storage | Tj ≤ 150 °C / Tstg −40…+125 °C |
| Package / Mass | Toshiba 2-68D1A; ≈ 210 g |
| Screw Torque | 30 kg·cm (terminals) / 30 kg·cm (mounting) |
| Configuration | Single transistor module |
| Module | Applications | Notes |
| MG200H1AL2 | Motor drives; choppers; high-power switching | Confirm pinout, torque, and cooling; observe isolation rating. :contentReference[oaicite:7]{index=7} |
