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$68.74
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 600 V | N/A | 200 A | N/A | N/A | N/A | ≈  210 g |
| Voltage | 600 V |
| WPC | N/A |
| Amp/H | 200 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈  210 g |
The Toshiba MG200H1AL2 is a high-current 600 V, 200 A silicon NPN Darlington power transistor module designed for industrial switching and motor-control applications. Toshiba uses a triple-diffused Darlington transistor structure together with a built-in reverse-connected freewheel diode in a single isolated power-module package.
With high DC current gain, low collector-emitter saturation voltage and 400 A short-duration collector-current capability, the MG200H1AL2 is suited to motor drives, DC choppers, industrial switching equipment and legacy high-power conversion systems. The collector circuit is electrically isolated from the mounting base, simplifying heatsink installation and equipment grounding.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG200H1AL2 |
| Device Type | Silicon NPN triple-diffused Darlington power transistor module |
| Configuration | Single Darlington transistor with built-in reverse-connected diode |
| Collector-Base Voltage (VCBO) | 600 V |
| Collector-Emitter Sustaining Voltage (VCES(sus)) | 600 V |
| Collector-Emitter Sustaining Voltage (VCEO(sus)) | 550 V |
| Emitter-Base Voltage (VEBO) | 6 V |
| Continuous Collector Current (IC) | 200 A |
| Pulse Collector Current (ICP) | 400 A, 1 ms |
| Continuous Diode Current (IF) | 200 A |
| Peak Diode Current (IFM) | 400 A, 1 ms |
| Base Current (IB) | 25 A max |
| DC Current Gain (hFE) | 80 minimum @ VCE = 5 V, IC = 200 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.0 V max @ IC = 200 A |
| Base-Emitter Saturation Voltage (VBE(sat)) | 2.7 V max @ IC = 200 A, IB = 6 A |
| Turn-On Time (ton) | 2.0 µs max |
| Storage Time (tstg) | 12 µs max |
| Fall Time (tf) | 4.0 µs max |
| Diode Forward Voltage (VF) | Approx. 1.5 V typical @ IF = 200 A |
| Diode Reverse-Recovery Time (trr) | 2.0 µs max |
| Thermal Resistance Rth(j-c) — Transistor | 0.156°C/W |
| Thermal Resistance Rth(j-c) — Diode | 0.65°C/W |
| Collector Power Dissipation (PC) | 800 W @ TC = 25°C |
| Isolation Voltage | 2500 V AC for 1 minute, terminals-to-base |
| Maximum Junction Temperature | 150°C |
| Storage Temperature | −40°C to +125°C |
| Package | Toshiba 2-68D1A isolated-base power module |
| Mass | Approx. 210 g |
| Terminal Torque | 30 kg·cm (approx. 2.94 N·m) |
| Mounting Torque | 30 kg·cm (approx. 2.94 N·m) |
| Module | Representative Applications | Replacement Notes |
| MG200H1AL2 | Industrial motor drives; DC choppers; high-current switching; legacy power-conversion equipment | This is a Darlington bipolar power transistor module, not an IGBT. Verify base-drive requirements, pinout, voltage/current ratings, package dimensions and cooling requirements before substitution. |
