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TOSHIBA – MG100Q2YS51 – IGBT Power Transistor – Reclaimed Part

MG100Q2YS51_1
EE
MG100Q2YS51_1
EE

Manufacturer

OEM Part Number

MG100Q2YS51

GPS Part Number

27-TOS-MG100Q2YS51

Categories

Tags

Price:

$45.00

Specifications
View Spec Sheet
Voltage AH/kVA Length Width Height Weight
1200 V 100 A N/A N/A N/A ≈  430  g
Voltage 1200 V
Amp/H 100 A
Length N/A
Width N/A
Height N/A
Weight ≈  430  g

Toshiba — MG100Q2YS51 IGBT Module
1200 V •
100 A •
Dual half-bridge (2 IGBTs + antiparallel fast/soft diodes) •
Isolated baseplate
What it is

1200 V / 100 A dual IGBT power module for UPS inverters, motor drives, and high-power SMPS. Each IGBT includes a
reverse-connected fast/soft recovery diode. Insulated mounting base simplifies heatsinking and grounding.

At-a-Glance
  • Voltage / Current: 1200 V / 100 A (DC @ TC=80 °C; 150 A @ 25 °C)
  • Topology: Dual IGBT half-bridge with antiparallel fast/soft diodes
  • Mounting: Screw terminals; isolated baseplate
  • Use Cases: UPS inverters; AC motor drives; choppers; welders; SMPS
Features
  • Low conduction loss — VCE(sat) 2.8 V typ / 3.6 V max @ 100 A, 25 °C; 3.1 V typ / 4.0 V max @ 125 °C.
  • Fast switching — tf ≤ 0.3 µs; toff ~0.6 µs (inductive load, 600 V, 100 A, RG=9.1 Ω).
  • Isolated baseplate — 2.5 kVRMS (1 min) terminals→base.
Technical Specifications
Parameter Value
Manufacturer Toshiba
Part Number MG100Q2YS51
Device Type Dual IGBT half-bridge with antiparallel diodes
Collector-Emitter Voltage (VCES) 1200 V
Continuous Collector Current (IC) 100 A @ TC=80 °C (150 A @ 25 °C)
Pulse Collector Current (ICP, 1 ms) 200 A @ 80 °C / 300 A @ 25 °C
Forward Diode Current (IF / IFM) 100 A DC / 200 A (1 ms)
Gate-Emitter Voltage (VGES) ±20 V
VCE(sat) (typ./max) 2.8 / 3.6 V @ IC=100 A, VGE=15 V, 25 °C; 3.1 / 4.0 V @ 125 °C
Gate Threshold (VGE(off)) 3.0 – 6.0 V (IC=100 mA)
Capacitances (typ.) Cies ~12 nF (VCE=10 V, f=1 MHz)
Switching (typ.) td(on) ~0.05 µs; tr ~0.05 µs; td(off) ~0.5 µs; tf 0.1–0.3 µs; toff ~0.6 µs
Diode (per leg) VF 2.4 V typ / 3.5 V max @ 100 A; trr 0.1–0.25 µs
Thermal Resistance RthJC(IGBT) 0.16 °C/W; RthJC(Diode) 0.47 °C/W
Isolation (terminals→base) 2.5 kVRMS / 1 min
Operating / Storage Tj ≤ 150 °C / Tstg −40…+125 °C
Collector Power Dissipation 660 W @ TC=25 °C
Package / Mass Toshiba 2-109C4A isolated-base module; ≈ 430 g
Configuration Dual (2-device) half-bridge
Recommended Torque ≈ 3 N·m (terminals / mounting)
Compatibility / Representative Uses
Module Applications Notes
MG100Q2YS51 UPS; AC drives; DC choppers; welders; SMPS Confirm pinout and torque; observe isolation and cooling requirements.
Why buy from Gruber
  • Tested pulls & new stock — Gate/diode behavior verified, continuity checked, baseplate flatness inspected.
  • Traceability — Each module labeled with a work-order ID for service history confidence.
  • Drop-in help — We match legacy Toshiba dual-pack footprints for direct replacement.

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