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$44.28
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 1200 V | N/A | 100 A | N/A | N/A | N/A | ≈  430 g |
| Voltage | 1200 V |
| WPC | N/A |
| Amp/H | 100 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈  430 g |
The Toshiba MG100Q2YS51 is a high-power 1200 V N-channel IGBT module containing a complete half-bridge in a single isolated package. Toshiba rates the module for 150 A collector current at TC = 25°C and 100 A at TC = 80°C, making it well suited to demanding industrial power-switching and motor-control applications.
The module combines two IGBT switching elements with built-in reverse-connected freewheel diodes and an electrically isolated case. High input impedance, fast switching and robust current capability make the MG100Q2YS51 suitable for UPS inverters, AC motor drives, DC choppers, welding equipment and other high-power conversion systems.
| Parameter | Value |
| Manufacturer | Toshiba |
| Part Number | MG100Q2YS51 |
| Device Type | Silicon N-channel IGBT power module |
| Circuit Configuration | Complete half-bridge — two series-connected IGBT elements with built-in diodes |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC) | 150 A @ TC = 25°C / 100 A @ TC = 80°C |
| Pulse Collector Current (ICP) | 300 A @ TC = 25°C / 200 A @ TC = 80°C, 1 ms |
| Gate-Emitter Voltage (VGES) | ±20 V |
| Forward Diode Current (IF) | 100 A DC |
| Peak Forward Diode Current (IFM) | 200 A, 1 ms |
| Collector Power Dissipation (PC) | 660 W @ TC = 25°C |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 3.6 V max @ specified Toshiba test conditions |
| Gate Threshold Voltage | 3.0–6.0 V |
| Switching Fall Time (tf) | 0.3 µs max under specified inductive-load conditions |
| Thermal Resistance Rth(j-c) — IGBT | Approx. 0.16°C/W |
| Thermal Resistance Rth(j-c) — Diode | Approx. 0.47°C/W |
| Isolation Voltage | 2500 V AC for 1 minute, terminals-to-base |
| Maximum Junction Temperature | 150°C |
| Storage Temperature | −40°C to +125°C |
| Package | Toshiba 2-109C4A |
| Number of Elements | 2 IGBT elements with built-in diodes |
| Terminal Count | 7 |
| Mass | Approx. 430 g |
| Recommended Terminal Torque | 3 N·m |
| Recommended Mounting Torque | 3 N·m |
| Module | Representative Applications | Replacement Notes |
| MG100Q2YS51 | Motor controls; UPS inverters; industrial inverters; DC choppers; welding equipment; high-power switching systems | Verify 1200 V rating, half-bridge configuration, gate-drive requirements, terminal layout, package dimensions and thermal requirements before substitution. |
