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$125.89
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 1200 V | N/A | 300 A | N/A | N/A | N/A | ≈ 750 g |
| Voltage | 1200 V |
| WPC | N/A |
| Amp/H | 300 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | ≈ 750 g |
The Semikron SKM300GB125D is a 1200 V ultra-fast NPT IGBT power module in the SEMITRANS 3 package. Semikron specifies the module as a 200 A nominal-current device, with continuous collector-current capability up to 300 A at a case temperature of 25°C under the specified operating conditions.
The GB half-bridge configuration combines two NPT IGBT switching elements with fast, soft-recovery inverse CAL diodes. Its low-inductance construction, short tail current, high short-circuit capability and DCB-isolated copper baseplate make it particularly well suited to high-frequency UPS systems, switched-mode power supplies, resonant inverters, inductive heating and electronic welding equipment.
| Parameter | Value |
| Manufacturer | Semikron Danfoss |
| Part Number | SKM300GB125D |
| Customer / OEM Code | SKM-300GB-125D-03120E — verify against module marking / OEM documentation |
| Semikron Legacy Part Number | 22890624 |
| Product Family | SEMITRANS 3 |
| Device Type | Ultra-fast NPT IGBT power module |
| Circuit Topology | Half-bridge — two IGBTs with inverse CAL diodes |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Nominal Current | 200 A |
| Continuous Collector Current (IC) | 300 A @ Tc = 25°C; 210 A @ Tc = 80°C |
| Repetitive Peak Collector Current (ICRM) | 400 A |
| Gate-Emitter Voltage (VGES) | ±20 V |
| Short-Circuit Withstand | Approx. 10 µs under specified test conditions |
| Diode Continuous Forward Current (IF) | 260 A @ Tc = 25°C; 180 A @ Tc = 80°C |
| Repetitive Peak Diode Current (IFRM) | 400 A |
| Surge Diode Current (IFSM) | 1800 A — 10 ms sinusoidal pulse |
| Module RMS Current | 500 A |
| Collector-Emitter Saturation Voltage VCE(sat) | Approx. 3.3 V typical @ IC = 200 A, VGE = 15 V |
| Gate Charge (QG) | Approx. 2000 nC |
| Turn-On Energy (Eon) | Approx. 16 mJ @ IC = 200 A under specified test conditions |
| Turn-Off Energy (Eoff) | Approx. 30 mJ @ IC = 200 A under specified test conditions |
| Thermal Resistance Rth(j-c) — IGBT | 0.075 K/W per IGBT |
| Junction Temperature | −40°C to +150°C |
| Storage Temperature | −40°C to +125°C |
| Isolation Voltage | 4000 V AC for 1 minute |
| Baseplate | Electrically isolated copper baseplate using DCB technology |
| Clearance / Creepage | 10 mm / 20 mm |
| Package | SEMITRANS 3 |
| Dimensions | 106 × 62 × 31 mm |
| Net Mass | Approx. 310 g |
| Configuration | GB half-bridge — two IGBTs with antiparallel CAL freewheel diodes |
| Module | Representative Applications | Replacement Notes |
| SKM300GB125D | High-frequency UPS; switched-mode power supplies; resonant inverters; inductive heating; electronic welders | Verify 1200 V rating, nominal and temperature-dependent current capability, GB half-bridge topology, gate-drive requirements, switching frequency, terminal layout and thermal requirements before substitution. |
