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SEMIKRON – SKM-300GB-125D-03120E – IGBT Power Transistor – Reclaimed Part

SKM-300GB-125D-03120E_1
EE
SKM-300GB-125D-03120E_1
EE

Manufacturer

OEM Part Number

SKM-300GB-125D-03120E

GPS Part Number

27-SEM-SKM-300GB-125D-03120E

Categories

Tags

Price:

$126.00

Specifications
View Spec Sheet
Voltage AH/kVA Length Width Height Weight
1200 V 300 A N/A N/A N/A ≈ 750 g
Voltage 1200 V
Amp/H 300 A
Length N/A
Width N/A
Height N/A
Weight ≈ 750 g

Semikron — SKM300GB125D IGBT Module
1200 V •
300 A •
Dual half-bridge (2 IGBTs + antiparallel CAL diodes) •
Isolated baseplate (SEMITRANS 3, 106×62×31 mm)
What it is

1200 V / 300 A dual half-bridge IGBT module used in UPS, drives and high-power SMPS. Non-punch-through (NPT) IGBT die with fast, soft CAL free-wheel diodes in a low-inductance SEMITRANS 3 housing; insulated DCB base simplifies heatsinking and grounding.

At-a-Glance
  • Voltage / Current: 1200 V / 300 A (Tc=25 °C)
  • Topology: Dual IGBT half-bridge with antiparallel CAL diodes
  • Mounting: Screw-terminal module; isolated copper baseplate (DCB)
  • Package: SEMITRANS 3 — 106×62×31 mm; ~SEMIKRON standard layout
  • Applications: UPS (fsw > 20 kHz), resonant/induction heating, welders, SMPS
Features
  • Low inductance case with short-tail NPT IGBT and soft-recovery CAL diodes.
  • Rugged SOA & SC capability — short-circuit withstand tSC ≈ 10 µs (family).
  • 4 kV isolation between terminals and baseplate (AC, 1 min).
Technical Specifications

Parameter Value
Collector-Emitter Voltage (VCES) 1200 V
Continuous Collector Current (IC) 300 A @ Tc=25 °C; 210 A @ Tc=80 °C
Repetitive Peak Collector Current (ICRM) 400 A
Gate-Emitter Voltage (VGES) ±20 V
Short-circuit withstand (tpsc) 10 µs (typ. conditions)
Diode Forward Current (IF) 260 A @ Tc=25 °C; 180 A @ Tc=80 °C
Repetitive Peak Diode Current (IFRM) 400 A
Surge Diode Current (IFSM) 1800 A, 10 ms, sin., Tj=150 °C
Module IRMS 500 A
Junction / Storage Temp. −40…+150 °C / −40…+125 °C
Isolation Voltage 4000 VAC, 1 min
VCE(sat) @ IC=200 A, VGE=15 V typ. 3.3 V, max 3.85 V
rCE (on) @ VGE=15 V 9 mΩ (25 °C)  /  11.5 mΩ (125 °C)
Input/Output/Reverse Capacitances Cies 18–24 nF; Coes 2.5–3.2 nF; Cres 1.0–1.3 nF
Total Gate Charge (Qg) ≈ 2000 nC
ton / tr (VCC=600 V, IC=200 A, RGon=3 Ω) ≈ 130 ns / 40 ns
toff / tf (Tj=125 °C, RGoff=3 Ω) ≈ 460 ns / 30 ns
Eon / Eoff @ 200 A ≈ 16 mJ / 30 mJ
Rth(j-c) (per IGBT) 0.075 K/W
Package / Dimensions SEMITRANS 3 — 106×62×31 mm
Configuration Dual IGBT half-bridge (7-pin) with antiparallel diodes
Compatibility / Representative Uses
Module Applications Notes
SKM300GB125D UPS; SMPS; induction/resonant heating; welders; motor drives Observe isolation and thermal specs; torque per SEMITRANS 3 guidelines; use appropriate gate resistors.
Why buy from Gruber
  • Tested pulls & new stock — Gate/diode behavior verified, continuity checked, baseplate flatness inspected.
  • Traceability — Each module labeled with a work-order ID for service history confidence.
  • Drop-in help — We match GB vs. other SEMITRANS variants and fit them correctly in your frame.

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