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$44.00
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 600 V | N/A | 75 A | N/A | N/A | N/A | 350 g |
| Voltage | 600 V |
| WPC | N/A |
| Amp/H | 75 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 350 g |
The Powerex CM75DU-12F is a 600 V, 75 A dual IGBT power module containing two high-power IGBT switching devices in a half-bridge configuration, each paired with a reverse-connected super-fast free-wheel diode. Designed for demanding power-conversion applications, this module combines fast switching, low conduction loss, strong electrical isolation, and a compact screw-mount package.
The integrated half-bridge configuration makes the CM75DU-12F well suited for UPS inverter and rectifier stages, AC motor drives, industrial inverters, battery-powered converters, servo systems, and other high-power switching equipment. Its electrically isolated baseplate allows efficient heatsink mounting while maintaining separation between the semiconductor circuit and chassis.
| Parameter | Value |
| Manufacturer | Powerex / Mitsubishi Electric |
| Part Number | CM75DU-12F |
| Device Type | Dual IGBT half-bridge with antiparallel super-fast diodes |
| Collector-Emitter Voltage (VCES) | 600 V |
| Collector Current (IC) | 75 A @ TC=25 °C; 150 A peak pulse |
| Maximum Collector Dissipation (PC) | 290 W @ TC=25 °C |
| VCE(sat) | 1.6 V typ. / 2.2 V max @ VGE=15 V, IC=75 A, 25 °C |
| Gate-Emitter Voltage | ±20 V maximum |
| Gate Threshold VGE(th) | 5–7 V; approximately 6 V typical |
| Input Capacitance (Cies) | 20 nF typical |
| Output Capacitance (Coes) | 1.4 nF typical |
| Reverse Transfer Capacitance (Cres) | 0.75 nF typical |
| Total Gate Charge | Approximately 465 nC @ 300 V / 75 A, 15 V gate |
| Turn-On Delay | Approximately 100 ns typical |
| Rise Time | Approximately 80 ns typical |
| Turn-Off Delay | Approximately 300 ns typical |
| Fall Time | Approximately 250 ns typical |
| Diode Reverse-Recovery Time | 150 ns typical |
| Diode Reverse-Recovery Charge | 1.4 µC typical |
| Diode Forward Voltage | VEC maximum 2.6 V @ 75 A |
| Thermal Resistance — IGBT | RthJC 0.43 °C/W per IGBT; 0.29 °C/W under-chip reference |
| Thermal Resistance — Diode | RthJC 0.90 °C/W per diode |
| Case-to-Fin Thermal Resistance | RthCF 0.055 °C/W, module with thermal compound |
| Isolation | 2.5 kV RMS / 1 minute, terminals-to-baseplate |
| Operating Junction Temperature | −40 °C to +150 °C |
| Storage Temperature | −40 °C to +125 °C |
| Hardware / Torque | M5 terminals and mounts; approximately 40 in-lb |
| Approximate Mass | 310 g |
| Package / Footprint | Approx. 94 × 48 × 30 mm; 80 mm mounting-hole spacing |
| Configuration | Dual (2-pack half-bridge) |
| Condition | Reclaimed Part |
| Module | Applications | Replacement Notes |
| CM75DU-12F | UPS inverter/rectifier stages; AC motor drives; industrial inverters; battery-powered supplies; power-conversion equipment | Confirm complete part number, terminal configuration, gate/emitter pinout, mounting dimensions and thermal requirements before replacement. |
The Powerex CM75DU-12F is a 600 V, 75 A dual IGBT power module containing two high-power IGBT switching devices in a half-bridge configuration, each paired with a reverse-connected super-fast free-wheel diode. Designed for demanding power-conversion applications, this module combines fast switching, low conduction loss, strong electrical isolation, and a compact screw-mount package.
The integrated half-bridge configuration makes the CM75DU-12F well suited for UPS inverter and rectifier stages, AC motor drives, industrial inverters, battery-powered converters, servo systems, and other high-power switching equipment. Its electrically isolated baseplate allows efficient heatsink mounting while maintaining separation between the semiconductor circuit and chassis.
| Parameter | Value |
| Manufacturer | Powerex / Mitsubishi Electric |
| Part Number | CM75DU-12F |
| Device Type | Dual IGBT half-bridge with antiparallel super-fast diodes |
| Collector-Emitter Voltage (VCES) | 600 V |
| Collector Current (IC) | 75 A @ TC=25 °C; 150 A peak pulse |
| Maximum Collector Dissipation (PC) | 290 W @ TC=25 °C |
| VCE(sat) | 1.6 V typ. / 2.2 V max @ VGE=15 V, IC=75 A, 25 °C |
| Gate-Emitter Voltage | ±20 V maximum |
| Gate Threshold VGE(th) | 5–7 V; approximately 6 V typical |
| Input Capacitance (Cies) | 20 nF typical |
| Output Capacitance (Coes) | 1.4 nF typical |
| Reverse Transfer Capacitance (Cres) | 0.75 nF typical |
| Total Gate Charge | Approximately 465 nC @ 300 V / 75 A, 15 V gate |
| Turn-On Delay | Approximately 100 ns typical |
| Rise Time | Approximately 80 ns typical |
| Turn-Off Delay | Approximately 300 ns typical |
| Fall Time | Approximately 250 ns typical |
| Diode Reverse-Recovery Time | 150 ns typical |
| Diode Reverse-Recovery Charge | 1.4 µC typical |
| Diode Forward Voltage | VEC maximum 2.6 V @ 75 A |
| Thermal Resistance — IGBT | RthJC 0.43 °C/W per IGBT; 0.29 °C/W under-chip reference |
| Thermal Resistance — Diode | RthJC 0.90 °C/W per diode |
| Case-to-Fin Thermal Resistance | RthCF 0.055 °C/W, module with thermal compound |
| Isolation | 2.5 kV RMS / 1 minute, terminals-to-baseplate |
| Operating Junction Temperature | −40 °C to +150 °C |
| Storage Temperature | −40 °C to +125 °C |
| Hardware / Torque | M5 terminals and mounts; approximately 40 in-lb |
| Approximate Mass | 310 g |
| Package / Footprint | Approx. 94 × 48 × 30 mm; 80 mm mounting-hole spacing |
| Configuration | Dual (2-pack half-bridge) |
| Condition | Reclaimed Part |
| Module | Applications | Replacement Notes |
| CM75DU-12F | UPS inverter/rectifier stages; AC motor drives; industrial inverters; battery-powered supplies; power-conversion equipment | Confirm complete part number, terminal configuration, gate/emitter pinout, mounting dimensions and thermal requirements before replacement. |
