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$127.00
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 600 V | N/A | 200 A | N/A | N/A | N/A | 380 – 420 g |
| Voltage | 600 V |
| WPC | N/A |
| Amp/H | 200 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 380 – 420 g |
The Powerex CM200DU-12F is a high-current 600 V, 200 A dual IGBT power module configured as a two-device half-bridge. Each IGBT incorporates a reverse-connected super-fast free-wheel diode, providing a complete high-power switching leg in a rugged, electrically isolated package.
Designed for demanding industrial power-conversion applications, the CM200DU-12F is well suited for UPS inverter and rectifier stages, industrial motor drives, servo systems, DC power converters, welding equipment, and general-purpose high-power inverters. Its combination of high current capability, low collector-emitter saturation voltage, fast diode recovery, and an isolated baseplate makes it particularly useful when repairing or maintaining legacy critical-power equipment.
The module is rated for 200 A continuous collector current with pulse capability up to approximately 400 A. Low VCE(sat) helps reduce conduction losses in high-current switching stages, while the integrated fast-recovery diodes support efficient commutation of inductive loads. The isolated mounting base also simplifies heatsink installation and electrical separation from the equipment chassis.
| Parameter | Value |
| Manufacturer | Powerex / Mitsubishi Electric |
| Part Number | CM200DU-12F |
| Device Type | Dual IGBT half-bridge with antiparallel super-fast diodes |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC) | 200 A @ TC=25 °C |
| Pulse Collector Current | 400 A |
| Maximum Collector Dissipation | Approximately 780–890 W @ TC=25 °C |
| VCE(sat) | Approximately 1.7–1.8 V typical / approximately 2.2 V max @ VGE=15 V, IC=200 A, 25 °C |
| Gate-Emitter Voltage (VGES) | ±20 V maximum |
| Gate Threshold VGE(th) | Approximately 5–7 V; 6 V typical |
| Input Capacitance (Cies) | Approximately 60–80 nF |
| Output Capacitance (Coes) | Approximately 3 nF |
| Reverse Transfer Capacitance (Cres) | Approximately 1.6 nF |
| Total Gate Charge | Approximately 1000–1200 nC, depending on test conditions |
| Free-Wheel Diodes | Integrated super-fast antiparallel diode for each IGBT |
| Diode Forward Voltage | Approximately 2.0–2.5 V @ 200 A |
| Diode Reverse-Recovery Time | Approximately 0.2–0.3 µs |
| Thermal Resistance — IGBT | RthJC approximately 0.10–0.12 °C/W per IGBT |
| Thermal Resistance — Diode | RthJC approximately 0.15–0.18 °C/W per diode |
| Isolation Voltage | 2.5 kV RMS / 1 minute, terminals-to-baseplate |
| Operating Junction Temperature | −40 °C to +150 °C |
| Storage Temperature | −40 °C to +125 °C |
| Approximate Dimensions | 108 × 62 × 30 mm class |
| Approximate Weight | 380–420 g |
| Torque | Approximately 4.5 N·m / 40 in-lb for applicable M6 hardware |
| Configuration | Dual / 2-pack half-bridge |
| Condition | Reclaimed Part |
| Module | Applications | Replacement Notes |
| CM200DU-12F | UPS inverter/rectifier bridges; industrial motor drives; servo systems; DC power converters; welding and industrial power equipment | Verify the complete part number, terminal layout, gate connections, mounting dimensions, electrical ratings, and thermal requirements before replacement. |
