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$180.00
| Voltage | WPC | AH/kVA | Length | Width | Height | Weight |
|---|---|---|---|---|---|---|
| 1200 V | N/A | 200 A | N/A | N/A | N/A | 400 g |
| Voltage | 1200 V |
| WPC | N/A |
| Amp/H | 200 A |
| Length | N/A |
| Width | N/A |
| Height | N/A |
| Weight | 400 g |
The Mitsubishi Electric / Powerex CM200DU-24F is a high-power 1200 V, 200 A dual IGBT module containing two power IGBTs arranged as a half-bridge. Each switching device incorporates an antiparallel super-fast free-wheel diode, making the module well suited for high-current inverter, UPS, motor-drive, converter, and industrial power-control applications.
The dual half-bridge configuration allows one module to provide a complete inverter leg, reducing the number of individual semiconductor packages and high-current interconnections required in multi-phase power systems. Multiple CM200DU-24F modules can be used to construct high-power inverter and motor-control stages while retaining a serviceable modular architecture.
With a 1200 V collector-emitter rating, 200 A continuous collector-current capability, approximately 400 A pulsed capability, low saturation voltage, and fast free-wheel diode recovery, the CM200DU-24F is designed for demanding switching environments. Its electrically isolated baseplate allows direct mounting to an appropriate heatsink while maintaining isolation between the power circuit and equipment chassis.
| Parameter | Value |
| Manufacturer | Mitsubishi Electric / Powerex |
| Part Number | CM200DU-24F |
| Device Type | Dual IGBT half-bridge with antiparallel super-fast diodes |
| Circuit Configuration | Dual / 2-pack half-bridge |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC) | 200 A @ TC=25 °C |
| Peak Collector Current | Approximately 400 A pulsed |
| Maximum Collector Dissipation (PC) | Approximately 890 W @ TC=25 °C |
| Gate-Emitter Voltage (VGES) | ±20 V maximum |
| VCE(sat) @ 25 °C | 1.8 V typical / 2.4 V maximum @ VGE=15 V, IC=200 A |
| VCE(sat) @ 125 °C | Approximately 1.9 V typical |
| Gate Threshold Voltage (VGE(th)) | 5–7 V; approximately 6 V typical |
| Total Gate Charge (QG) | Approximately 2200 nC @ 600 V, 200 A, 15 V |
| Input Capacitance (Cies) | Approximately 78 nF |
| Output Capacitance (Coes) | Approximately 3.4 nF |
| Reverse Transfer Capacitance (Cres) | Approximately 2.0 nF |
| Free-Wheel Diode Forward Voltage | VEC up to approximately 3.2 V @ 200 A |
| Diode Reverse-Recovery Time (trr) | Approximately 200 ns |
| Diode Reverse-Recovery Charge (Qrr) | Approximately 12.2 µC |
| IGBT Thermal Resistance RthJC | Approximately 0.15 °C/W per IGBT |
| Diode Thermal Resistance RthJC | Approximately 0.18 °C/W per diode |
| Case-to-Heatsink Thermal Resistance | Approximately 0.020 °C/W with thermal grease |
| Isolation Test Voltage | 2.5 kV RMS / 1 minute, terminals-to-baseplate |
| Operating Junction Temperature | −40 °C to +150 °C |
| Storage Temperature | −40 °C to +125 °C |
| Approximate Dimensions | 108 × 62 × 29 mm |
| Approximate Mass | 400 g |
| Terminal / Mounting Torque | Approximately 40 in-lb for M6 hardware |
| Baseplate | Electrically isolated metal baseplate |
| Configuration | Dual IGBT half-bridge |
| Condition | Reclaimed Part |
| Module | Representative Applications | Replacement Notes |
| CM200DU-24F | UPS inverter and rectifier stages; industrial motor drives; variable-frequency drives; power converters; DC-link switching; battery-powered industrial equipment | Confirm the complete CM200DU-24F part number, half-bridge topology, gate and auxiliary terminal arrangement, mechanical footprint, mounting hardware, gate-drive characteristics and cooling requirements before substitution. |
