TOSHIBA – MG400J1US11 – IGBT Power Transistor – Reclaimed Part

What it is

The Toshiba MG400J1US11 is a high-current 600 V, 400 A silicon N-channel IGBT power module designed for industrial switching and motor-control applications. Its single-switch / 1U configuration combines one high-current IGBT switching element with a built-in reverse-connected freewheel diode in a compact industrial power-module package.

Designed for demanding power-conversion equipment, the MG400J1US11 provides the high input impedance and switching characteristics associated with IGBT technology while supporting substantial load current. Representative applications include industrial motor drives, UPS and inverter systems, DC choppers, welding equipment and other high-current switching circuits.

At-a-Glance

• Voltage Rating: 600 V
• Current Rating: 400 A
• Device Type: Silicon N-channel IGBT power module
• Configuration: Single-switch / 1U
• Number of Switching Elements: 1
• Integrated Diode: Built-in reverse-connected freewheel diode
• Applications: Motor drives; UPS systems; industrial inverters; DC choppers; welders

Features

• 600 V / 400 A power class — designed for demanding high-current industrial switching applications.
• Single-switch configuration — one high-current IGBT switching element in Toshiba’s 1U module architecture.
• Built-in freewheel diode — integrated reverse-connected diode supports inductive-load switching.
• High input impedance — insulated-gate construction supports efficient gate-drive control.
• Industrial power-module construction — designed for high-current power-conversion and motor-control equipment.
• Legacy equipment support — suitable for maintaining systems originally designed around Toshiba MG-series IGBT modules.

Technical Specifications

Applications / Replacement Considerations